Allicdata Part #: | PTVA123501EC-V2-R250-ND |
Manufacturer Part#: |
PTVA123501EC-V2-R250 |
Price: | $ 235.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet |
DataSheet: | PTVA123501EC-V2-R250 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 214.20000 |
Series: | * |
Part Status: | Active |
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The PTVA123501EC-V2-R250 is a field effect transistor (FET) that falls under Radio Frequency (RF) transistors. FETs, like the PTVA123501EC-V2-R250, are three-terminal semiconductor devices which act as electrically-controlled switches, providing gain and amplification. The device has a drain, gate, and source terminal, and a drain-source voltage up to 37 volts.
The PTVA123501EC-V2-R250 is designed for use in various applications in consumer, automotive, communications, and industrial products. Applications include power supplies, current sources and sinks, DC-DC converters, and radio frequency transmission. It is highly integrated, featuring on-chip integration of ESD, EMI, and overcurrent protection.
The PTVA123501EC-V2-R250 operates on the principle of field effect control. To provide gain and amplification, the FET relies on a conducting channel between the source and drain electrodes. The FET’s gate form an electric field, which creates or hinders the flow of current across the channel. The conductivity of the channel is dependent on the amount of charge (or voltage) applied to the gate terminal.
To increase and reduce the current flow between the source and drain electrodes, the voltage applied to the gate terminal is adjusted. When there is voltage, the PTVA123501EC-V2-R250 is in an ON state, allowing current to flow freely through the channel. When there is no voltage, the FET is in an OFF state, preventing the flow of current through the channel.
This FET provides excellent performance in terms of bandwidth, power supply rejection ratio, linearity, and speed. It also has high input impedance and low output impedance, and can handle high temperatures. This makes it suitable for use in applications operating at high frequencies, such as RF transmission.
The PTVA123501EC-V2-R250 is a reliable and efficient RF FET, suitable for use in many applications. It provides excellent performance in terms of bandwidth, power supply rejection ratio, linearity, speed, and temperature capability. Furthermore, it is highly integrated, featuring on-chip integration of ESD, EMI, and overcurrent protection. All of these attributes make the PTVA123501EC-V2-R250 an ideal choice for various applications in consumer, automotive, communications, and industrial products.
The specific data is subject to PDF, and the above content is for reference
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