PTVA120121M-V1-R1K

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PTVA120121M-V1-R1K Application Field and Working Principle

PTVA120121M-V1-R1K is an innovative new type of metal oxide semiconductor field effect transistor (MOSFET) developed by Panasonic. It provides excellent performances, with good on-state conduction, low noise, low power consumption and excellent ESD protection.

MOSFETs are three-terminal devices that use electric field, rather than current, to control the flow of current. Unlike a bipolar junction transistor which relies on the controlled-current-based bipolar current flow, a MOSFET does not even have to have a voltage applied to its gate for the device to conduct. This makes the MOSFET technology incredibly attractive from an electronics design and manufacturing standpoint.

PTVA120121M-V1-R1K is a bilateral MOSFET that exhibits very low on resistance and shows good controllability even at low gate voltages. Its high dynamic resistance allows it to be used as a buffer or as a linear amplifier in low-voltage applications, such as radio frequency (RF) applications. These devices can also be used in small signal amplifiers, converters, switching circuits, and large signal power amplifiers.

In wideband wireless and wireless broadband systems, PTVA120121M-V1-R1K is the ideal MOSFET choice due to its low gate charge, low gate capacitance, and low ON-resistance. The high-side ON-resistance is also very low, making it suitable for both Class A/B and Class D circuits. It can also be used for push-pull audio power amplifiers, and other analog circuits.

The core of the PTVA120121M-V1-R1K MOSFET is a silicon gate MOSFET structure, which uses a combination of metallic and polysilicon layers to form the gate. This gate structure, as well as its special passivating layer, allows the PTVA120121M-V1-R1K to exhibit an extremely low gate threshold voltage, resulting in very low gate charge. This also allows the device to be turned on and off rapidly, making it an excellent device for high-speed switching applications.

The working principle of a MOSFET is based on the Gate-source voltage (VGS). When a voltage is applied to the gate relative to the source, electrons are repulsed or attracted depending on the relative magnitude of the Voltage. This changes the channel resistance between the drain and the source resulting in a change in the flow of current. Thus, by controlling the gate voltage, the current between the drain and the source can be controlled.

The PTVA120121M-V1-R1K MOSFET is an excellent choice for many RF and other applications. Its low gate charge, low gate capacitance, and low on-resistance make it suitable for both Class A/B and Class D circuits, as well as for push-pull audio power amplifiers and other analog circuits.

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