Allicdata Part #: | PTVA082407NF-V1-R5-ND |
Manufacturer Part#: |
PTVA082407NF-V1-R5 |
Price: | $ 35.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC RF LDMOS FET 4HBSOF |
More Detail: | RF Mosfet LDMOS 48V 900mA 746MHz ~ 821MHz 20.5dB 2... |
DataSheet: | PTVA082407NF-V1-R5 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 32.67700 |
Series: | -- |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 746MHz ~ 821MHz |
Gain: | 20.5dB |
Voltage - Test: | 48V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 225W |
Voltage - Rated: | 105V |
Package / Case: | HBSOF-4-1 |
Supplier Device Package: | PG-HBSOF-4-1 |
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The PTVA082407NF-V1-R5 is a single junction high performance N-channel MOSFET transistor designed to operate in the field of RF applications. It is designed to provide the highest levels of RF performance with low power requirements, thus making it well suited for a variety of applications. The PTVA082407NF-V1-R5 is designed to provide maximum power efficiency, with a single 5V supply, as well as providing stable operation in a wide range of operating temperatures and environmental conditions.
The PTVA082407NF-V1-R5 is capable of handling up to 2A of current, and offers an extremely low on-resistance of only 130 mOhms. The combination of its high performance, low resistance, and high efficiency makes it a great choice for any application that requires high speed and low power consumption. Additionally, the transistor\'s wide operating temperature range ensures reliable performance in any environment.
The PTVA082407NF-V1-R5 is a reliable and versatile device, capable of being utilized in a variety of RF applications. It is well suited to mobile, handheld, and internet of things (IoT) applications. It is perfect for digital signal processing (DSP) applications such as multi-carrier transmission and packet-switching, as well as for applications that require high speed data transmission, such as short range wireless (Bluetooth) and RFID. Additionally, the PTVA082407NF-V1-R5 is an excellent choice for high frequency applications including high-speed switching, frequency synthesizers, and tunnel diodes.
The PTVA082407NF-V1-R5 is based on a vertical MOSFET arrangement, which has several benefits over the traditional lateral arrangement. It features a greater level of integration, with less external components required for its operation. This makes it easier to integrate into a system and reduce complexity when compared to a lateral arrangement. Additionally, the vertical arrangement provides superior RF performance, with lower distortion and better signal to noise ratio.
The primary purpose of the PTVA082407NF-V1-R5 is to provide a controlled voltage, current, or both to a particular circuit. Its operation is based on the principle of intrinsic gain; the device amplifies, or boosts, a small amount of voltage and current that is applied to it. Through this mechanism, the PTVA082407NF-V1-R5 is able to enable high-speed communication between devices, as well as regulate power, moderate modulation, and provide isolation in order to prevent interference between devices.
The PTVA082407NF-V1-R5 is an ideal choice for many RF applications, thanks to its low power requirements, high power efficiency and high speed. Its wide temperature tolerance as well as its low on-resistance makes it suitable for any application where signal integrity and power efficiency are of paramount importance.
The specific data is subject to PDF, and the above content is for reference
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