PTVA093002TCV1XWSA1

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The PTVA093002TCV1XWSA1 is a technology utilized in transistors, FETs and MOSFETs such as in radio frequency applications. This particular transistor has an on state drain current of 30A and an on state channel voltage of 9V, as well as a breakdown voltage of 75V. It is a dual P-channel enhancement mode power field effect transistor, suitable for use in many applications, such as low side switching.

The PTVA093002TCV1XWSA1 works through the use of gates, which are insulated from the channel, the source and the drain. This transistor has the advantage that its on state channel voltage is extremely low and because of the integrated Schottky diode it is designed to protect the device during ESD transients and is extremely efficient in avoiding current leakage. The transistor structure provides a high switching speed, and extended drain and source voltage capability, while running at very low RDS(on) values.

The PTVA093002TCV1XWSA1\'s various characteristics render it suitable for use in a host of powered electronic applications, such as in power tools, LED lighting, motor control, audio amplifiers and in high power switching or motor drive applications. The transistor could also be used in PWM power controlling applications, such as in solenoid and actuator control, in DC-DC converters and for power switching applications. In audio circuit applications, it could be used for audio amplifiers and in high frequency switching devices.

Depending on the application, the PTVA093002TCV1XWSA1 can be connected to various types of loads. A single device can control high currents, up to 30A, and due to its integrated gate protection, it can be safely used in harsh environments, thereby increasing the range of possible applications. The PTVA093002TCV1XWSA1 can be used in a variety of circuits where low on-state drain-source resistance and low input capacitance is a desired feature.

In conclusion, the PTVA093002TCV1XWSA1 is a dual P-channel enhancement mode power field effect transistor, suitable for use in transistors, FETs, MOSFETs, radio frequency applications and a number of powered electronic applications. This device is capable of working at very high drain currents and in harsh environments, owing to its integrated gate protection. The PTVA093002TCV1XWSA1 has a low on-state drain-source resistance and a low input capacitance, making it ideal for high frequency switching devices in audio circuits and various types of power and switching applications.

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