PTVA127002EV-V1-R0

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The PTVA127002EV-V1-R0 is a high-performance RF field-effect transistor (RF-FET) specifically engineered for electrical components used in the commercial and government markets. The transistor is a part of the PTVA series, which was developed in partnership with a key global supplier of RF-FETs and related products.

The PTVA127002EV-V1-R0 is designed for applications operating in memory, power and logic systems. It is ideal for applications that require a transient current capability, low noise, high input impedance, high linearity and high power output. The device also provides extended power range options, superior thermal stability and resistance to electrostatic discharge (ESD).

The PTVA127002EV-V1-R0 features an advanced vertical HBT device architecture, which enables superior performance and efficiency within a variety of electrical applications. It is designed with a thick level of gate oxide for improved gate charge control, which ensures low threshold voltage and high voltage capability. This transistor has an excellent total gate charge (Qg) performance and is characterized with a low on-state gate resistance (Rg).

The PTVA127002EV-V1-R0 has a high breakdown voltage and a low thermal resistance to optimize power dissipation. The device has a maximum drain-source voltage (VDS) of 1000V and a maximum gate-source voltage (VGS) of 25V. The device has a wide operating temperature range, enabling it to be used in a wide range of environmental conditions. The device also has an excellent thermal cycling capability.

The working principle of the PTVA127002EV-V1-R0 is based on the fact that it relies on a current path between the negative and positive source and drain regions for conduction. When a positive voltage is applied to the gate, an electric field is generated between the source and the drain. This field creates a drift current that amplifies the output signal.The transistor amplifies its input signal, resulting in an increased output current. Additionally, the device has a low output capacitance and low gate to drain capacitance for improved noise performance.

The PTVA127002EV-V1-R0 is a revolutionary high performance field effect transistor that combines advanced materials and production processes to offer a highly efficient and reliable RF-FET solution. The device is engineered to deliver superior performance in memory, power and logic applications, providing robust performance and reliability to meet the demanding requirements of commercial and government markets.

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