PXAC180602MD-V1-R500

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The PXAC180602MD-V1-R500 is a high performance lateral GaN HEMT transistor used in power amplifier applications such as wireless communications, satellite television, and radar systems. This transistor is especially designed for optimal performance in radio frequency applications, making it the ideal choice for radio frequency power amplification.

Advantages

The PXAC180602MD-V1-R500 offers numerous advantages over other transistors, including:

• High output power: The transistor provides an output power of 500W in its saturation region, making it ideal for the most demanding applications.
• Wide frequency range: PXAC180602MD-V1-R500 has a wide frequency range from 8GHz to 12GHz—ideal for applications like Wi-Fi, satellite television, and radar.
• High gain: This transistor has a gain of 21.3dB which means it can reach impressive power levels without having to add external components, saving time and cost.
• High breakdown voltage: The breakdown voltage of the PXAC180602MD-V1-R500 is 12V, which makes it suitable for the construction of power amplifiers and other high voltage applications.
• High efficiency: Thanks to its low bias current, the PXAC180602MD-V1-R500 is highly efficient and power-conserving in mobile and portable applications.

Application Field and Working Principle

The PXAC180602MD-V1-R500 is suitable for many high power radio frequency applications such as Wi-Fi, satellite television, and radar systems. It can be used for high power amplification and circuit protection, and its high output power, wide frequency range, and low bias current make it the ideal choice in these scenarios. With its low noise figure and high linearity, it is also suitable for use in receiver and transmitter designs.

Generally speaking, the PXAC180602MD-V1-R500 works on the principle of field-effect transistor technology, where the channels of the transistor are used to amplify the input signal. The base of the transistor is connected to the gate while the collector is connected to the drain, which together cause a current to flow through the device. The current flowing through the device results in a voltage drop across the drain and source, allowing an amplified signal to be applied to the drain.

Generally speaking, the output power and gain of the transistor are directly proportional to the gate voltage and current—the higher the gate current and voltage, the greater the output power and gain of the transistor. The gain of the transistor is determined by its transconductance, which is the ratio of the change in drain current to the change in its gate voltage. The higher the transconductance, the higher the gain of the transistor.

Conclusion

The PXAC180602MD-V1-R500 is a high-performance RF power transistor with a wide frequency range and high breakdown voltage, making it the ideal choice for radio frequency power amplification applications. Its superior performance and power efficiency make it the perfect choice for many of today’s demanding applications.

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