PXAC203302FV-V1-R250

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A PXAC203302FV-V1-R250 is an N-channel, 30 V-Trench field effect transistor (FET) from the electronic components manufacturer, Poteau Microelectronics and is particularly suited for RF applications. It is a depletion-mode device and is optimized for applications of 50 W and below.

This device provides high-frequency, high-gain performance and high power efficiency for wireless communication, including broadband and satellite, as well as navigation systems, antennas, and radar.

The PXAC203302FV-V1-R250 has a maximum drain current of 100 A (at V GS = 10 V, T j = 25°C) and a maximum drain-source voltage of 30 V. Its power dissipation of 250 W enables it to deliver up to 50 W of RF power, at unmatched power efficiency and linearity performance. Its exceptionally low input/output capacitance minimizes signal transitions, and exceptional broadband performance allows for a wide range of applications, such as base and mobile station amplifiers and base transceivers.

The principle in which aField Effect Transistor (FET) works is called \'Field Effect\'. A FET is a type of transistor that utilizes an electric field in order to control the current flow in the device. A FET is constructed from two regions of semiconductor material, the source region and the drain region, which are separated by a smaller region called the gate region. The gate region is insulated from the rest of the FET and contains no charge carriers. However, by applying an external voltage to the gate region, an electric field is created, which enables the flow of charge carriers between the source and drain regions.

The electric current through aField Effect Transistor is controlled by the voltage applied to the gate region. This is similar to the way in which a typical transistor works, in that the current flow is controlled by the voltage applied to the base terminal. However, the extra electric field generated by the voltage applied to the gate region of a FET allows for greater control over the transistor\'s current flow.

The PXAC203302FV-V1-R250 is an excellent choice for RF applications due to its high-frequency, high-gain performance and high power efficiency. Its exceptional input/output capacitance minimizes signal transitions, and its exceptional broadband performance allows for a wide range of applications. Its high power dissipation of 250 W enables it to deliver up to 50 W of RF power, at unmatched power efficiency and linearity performance.

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