PXAC182002FC-V2-R2

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A PXAC182002FC-V2-R2 is a type of field effect transistor (FET), which is a type of transistor used in electronic operations that requires controlling a certain amount of voltage and/or current. In terms of the specific application field and working principle of the PXAC182002FC-V2-R2, this particular device is a radio-frequency (RF) FET, designed for use in high frequency applications, and works by controlling the flow of electrical current through the transistor channel.

A FET is an unipolar device, meaning that unlike a bipolar junction transistor (BJT), which has both an “emitter” and a “collector”, the FET has only one “source” electrode and one “drain” electrode. It works by a combination of the three terminal gate, source, and drain. When a voltage is applied to the gate terminal, it creates an electrostatic field, allowing current to flow between the source and the drain terminals. Essentially, the gate voltage outcomes determine the source-drain current.

The PXAC182002FC-V2-R2 is a type of metal-oxide-semiconductor FET (MOSFET), specifically, an insulated-gate FET (IGFET). Unlike the junction FET (JFET) which has an “intrinsic” region of p-type and n-type semiconductor material, the MOSFET has an oxide layer (around 3nm thick) between the gate and the channel. This insulated gate allows for a much higher input impedance for the FET compared to the JFET, meaning that much less power is required to control its operation.

The PXAC182002FC-V2-R2 is designed for use in RF applications and is specifically designed to operate in the 500MHz to 2GHz frequency range. The device is a dual gate MOSFET and is specifically engineered for broadband amplifiers and low-noise amplifiers (LNAs). It is designed to center in the 700 to 900MHz band, making it perfect for applications such as satellite communication and other ISM bands.

The device features a low off-state gate leakage current of 0.2nA, making it perfect for operation with low voltages in a variety of conditions. Its low noise characteristics are due to its low gate-source voltage of 4V and low input capacitance of 22pF, making it great for use in any system requiring low-noise operation. In terms of gain, the device offers high linearity and low noise figure of 0.8dB and with a gain of 17dB.

The PXAC182002FC-V2-R2 is a versatile device designed for use in a wide range of radio-frequency applications, from satellite communication to cellular telephone systems. Its low input capacitance, low off-state gate leakage current, and low noise figure make it a great choice for use in any system requiring low-noise operation and high linearity. It’s a great device for any application that demands the highest levels of performance from RF devices.

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