PXAC210552ND-V1-R5

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PXAC210552ND-V1-R5 is a 50 Ω GaN on Silicon HEMT (High Electron Mobility Transistor) RF Power Amplifier. It exhibits excellent gain, high power and efficiency in a very small footprint. It is specially designed for use in high power, high speed wireless applications such as broadband data communications, short-wave communications, and WLAN (Wireless Local Area Network).

The device consists of three N-channel GaN(Gallium Nitride) HEMTs on one side and two N-channel MOSFETs (Metal-Oxide Semiconductor FETs) on the other side. A center drain connection is provided to facilitate testing. The amplifier is very low power, so it requires only a minimal heat sink and can be operated without active bias circuitry.

Due to its small size and minimal power requirements, the PXAC210552ND-V1-R5 is suitable for use in applications that demand very high power. Examples include pulsed and continuous operations, high speed communications, broadband wireless systems, satellite communications, Point-To-Point communications, high altitude communications, unmanned aerial vehicles, radar and Radio Frequency (RF) applications.

The gain of the PXAC210552ND-V1-R5 is typically 60 dB with a maximum efficiency of 50%. The device is designed to operate in the frequency range of 0.5 to 10 GHz and is suitable for Class A or B amplifiers. It has a high intercept point (IP3) of 38 dBm and a large output dynamic range of 17dB.

The working principle of the PXAC210552ND-V1-R5 is based on the physical properties of GaN HEMTs. These transistors are capable of operating at very high frequencies due to their high electron mobility. This allows them to switch quickly and create high frequency signals with less power consumption, resulting in high power efficiency. GaN additionally provides excellent thermal stability, which further helps to improve amplifier performance and reliability. In addition to that, its high breakdown voltage and linearity characteristics make this amplifier suitable for high frequency, high power applications.

The PXAC210552ND-V1-R5 is an excellent choice for applications that require high efficiency, high gain and wide bandwidth, such as LTE and 3G systems, point to point communication, broadcast transmission and high-speed digital systems. Its low power consumption, wide dynamic range and excellent linearity make it an ideal device for high power operations. Moreover, its high efficiency, small size and compatibility with other devices make it an excellent choice for many applications.

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