PXAC201602FC-V1-R250 Allicdata Electronics
Allicdata Part #:

PXAC201602FC-V1-R250-ND

Manufacturer Part#:

PXAC201602FC-V1-R250

Price: $ 45.63
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: IC AMP RF LDMOS
More Detail: RF Mosfet LDMOS 28V 360mA 2.02GHz 17.7dB 22.5W H-3...
DataSheet: PXAC201602FC-V1-R250 datasheetPXAC201602FC-V1-R250 Datasheet/PDF
Quantity: 1000
250 +: $ 41.47790
Stock 1000Can Ship Immediately
$ 45.63
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.02GHz
Gain: 17.7dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 360mA
Power - Output: 22.5W
Voltage - Rated: 65V
Package / Case: H-37248-4
Supplier Device Package: H-37248-4
Description

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The PXAC201602FC-V1-R250 is a high-power Field Effect Transistor that can be used in a variety of applications. It is designed to provide a high level of performance in radio-frequency (RF) communications, as well as in other high-frequency technologies.

The PXAC201602FC-V1-R250 is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), which is a type of transistor that is made up of two or more semiconductor layers that are separated by an oxide layer. The oxide layer acts as an electrical insulator, allowing the channels in the transistor to be formed. This is what makes MOSFETs useful in electronic systems, as it allows them to perform functions such as switching and amplification with minimal power consumption.

The PXAC201602FC-V1-R250 has a wide range of applications due to its high power handling capabilities. It is commonly used in mobile radios, television receivers and other communications devices, due to its ability to generate high power with minimal power consumption. It can also be used in power amplifiers, such as those found in cars and home audio systems. Additionally, it can be used in high-performance RF amplifiers and transmitters.

The working principle of the PXAC201602FC-V1-R250 is based on the field effect theory. The transistor is capable of amplifying or switching the flow of current in a circuit by controlling the resistance of its channels. The switching and amplification can be achieved by varying the voltage or current applied to the gate. When a voltage is applied to the gate, it causes a depletion or inversion region in the channel, which then changes the way current passes through it. This change in current is used to control the voltage or current of the circuits.

The PXAC201602FC-V1-R250 is an effective tool for those working in the radio-frequency field, due to its impressive power handling capabilities. Its switching and amplification capacities make it ideal for applications such as mobile radios, television receivers, amplifiers, and high-performance RF amplifiers and transmitters. With its ability to operate at high frequencies, it is also a vital component of communication systems.

The specific data is subject to PDF, and the above content is for reference

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