PXAC241702FC-V1-R0 Discrete Semiconductor Products

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.4GHz
Gain:	16.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	360mA
Power - Output:	28W
Voltage - Rated:	65V
Package / Case:	H-37248-4
Supplier Device Package:	H-37248-4

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Introduction to the PXAC241702FC-V1-R0

The PXAC241702FC-V1-R0, also known as the 24GHz Power Amplifier is a high power, wideband amplifier designed for use in high-end RF, military and space applications. The gain of this amplifier is 20dB with a maximum output power of 30dBm. The PXAC241702FC-V1-R0 utilizes a transistor enhancing the output of this amplifier, making it ideal for use in a wide range of applications.

Application Field of the PXAC241702FC-V1-R0

The PXAC241702FC-V1-R0 is mainly used in high-end RF applications, such as satellite communication, aeronautical communication, and military communication. This power amplifier has a wide-band frequency response, making it suitable for both base station and mobile communication applications. In addition, its low noise figures enable it to be used in low-noise, high-channel-count voice communication systems.The PXAC241702FC-V1-R0 can also be used for medical imaging such as magnetic resonance imaging, or for test and measurement applications like spectrum analysis.

Working Principle of the PXAC241702FC-V1-R0

The PXAC241702FC-V1-R0 utilizes a silicon carbide-based transistor, which is commonly referred to as an MOSFET - metal-oxide-semiconductor field-effect transistor. The MOSFET has an n-type and a p-type channel. The n-type channel works as an input, while the p-type channel acts as an output. In the PXAC241702FC-V1-R0, a radio-frequency voltage signal is fed into the n-type channel. This voltage signal serves as the input to the MOSFET, which then amplifies it and drives it out from the p-type channel. The output effect of the PXAC241702FC-V1-R0 is heavily reliant on the high frequency gain of the MOSFET. Its maximum output power is dependent on the size of the MOSFET and its operating temperature.In order to provide its impressive performance, the PXAC241702FC-V1-R0 utilizes an internally integrated thermal protection system. It monitors the device’s temperature, and will reduce the output power when the amplifier reaches a predetermined temperature.

Benefits of the PXAC241702FC-V1-R0

The PXAC241702FC-V1-R0 has many beneficial features, such as its high power, low noise figure, wide frequency response and flexibility in application. The PXAC241702FC-V1-R0\'s high power makes it suitable for a wide range of applications, from base station and mobile communication, to MRI and spectrum analysis.The PXAC241702FC-V1-R0 has a low noise figure, making it suitable for voice communication systems with a high channel count.The PXAC241702FC-V1-R0 has a wide band frequency response, enabling it to cover a large range of frequencies.Lastly, the PXAC241702FC-V1-R0 also has an integrated thermal protection system, ensuring that overheating is prevented.

Conclusion

The PXAC241702FC-V1-R0 is a high-power, wideband amplifier designed primarily for RF application. It utilizes a silicon carbide-based transistor to amplify and drive out a radio-frequency voltage, and its wide frequency response, low noise figure and integrated thermal protection system make it a highly desirable device for many applications.

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