PXAC201202FC-V2-R250

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.2GHz
Gain:	17dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	240mA
Power - Output:	16W
Voltage - Rated:	65V
Package / Case:	H-37248-4
Supplier Device Package:	H-37248-4

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PXAC201202FC-V2-R250 is an RF-type FET (field-effect transistor) which is specifically designed for high-frequency applications. This device is best suited for applications such as receivers and transmitters, oscillators, oscilloscope, power amplifiers and high-frequency signal generator circuitry. With its small package and high supply voltage (60 V) performance and high RF power gain, this device is an ideal choice for various RF/MIC and sensor applications.The FET is a three-terminal semiconductor device that is composed of two main parts, the source and the drain. When the FET is biased, electrons flow from the source to the drain, forming either a direct or alternating current depending on the type of device. The gate controls the amount of current flowing through the device, based on the voltage applied to the gate. This allows the device to be used in a variety of analog and switching applications.The PXAC201202FC-V2-R250 is a commonly used RF-FET capable of being used in a variety of operating conditions, including low noise and wide temperature range applications. It has a single stage, common source amplifier design, which is capable of operating from a wide voltage range of 5V to 60V. The PXAC201202FC-V2-R250 is also designed for linear operation and features an adjustable bias current for easy matching to various source impedances.The PXAC201202FC-V2-R250 utilizes a process technology that allows for a low noise, high dynamic range and high frequency operation. The device is designed with a high-performance gate design, which enables high-frequency operation from 800MHz to 2500MHz with a very low noise figure. The drain voltage of the device can be varied from 30V to 60V, enabling a gain control between 40dB and 50dB. In addition, the drain current can be varied up to 300mA, allowing for power amplification levels up to 50 watts.The working principle of the PXAC201202FC-V2-R250 is based on its FET structure, which consists of a semiconductor material as its substrate, between two metal layers. When a positive voltage is applied to the gate, the voltage causes a change in electrical resistance across the FET, allowing current to flow between the source and drain. This allows the device to act as an amplifier or switch, depending on the signal source. The signal source is sent to the gate, and the amplified signal is sent from the drain.The PXAC201202FC-V2-R250 is an excellent choice for use in a wide range of RF and Microwave applications, offering both high-frequency performance and low noise performance. The device\'s adjustable bias current and wide voltage range make it suitable for a large variety of applications, from low-noise linear amplifiers to high-bandwidth SWR applications. Its small size, high gain and ease of use make it a great choice for RF system engineers.

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