Allicdata Part #: | PXAC201202FC-V2-ND |
Manufacturer Part#: |
PXAC201202FC-V2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet LDMOS 28V 240mA 2.2GHz 17dB 16W H-37248-... |
DataSheet: | PXAC201202FC-V2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | LDMOS |
Frequency: | 2.2GHz |
Gain: | 17dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 240mA |
Power - Output: | 16W |
Voltage - Rated: | 65V |
Package / Case: | H-37248-4 |
Supplier Device Package: | H-37248-4 |
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PXAC201202FC-V2 is a type of Field Effect Transistor (FET). The FETs are divided into many categories, and PXAC201202FC-V2 is classified as an RF (Radio Frequency) Field-Effect Transistor. PXAC201202FC-V2 offers wideband RF power amplifier function at low voltage in multiple applications such as remote-controller, media players, and home appliances. This product also offers high efficiency, low current consumption, and wide operating temperature range for high reliability. In this article, the application fields and working principle of PXAC201202FC-V2 will be discussed.
The application field of PXAC201202FC-V2 mainly covers the consumer electronic devices. This type of transistors is ideally used for the radio frequency amplifiers in consumer electronic products, such as media player, remote-controller, digital cameras, gaming device, and TV sets. PXAC201202FC-V2 is also applied in other sectors, including medical and industrial equipment. For example, infrared transmitter and imaging apparatus in medicine benefit from the superior characteristics of the PXAC201202FC-V2, such as high efficiency and wide temperature range.
The working principle of the PXAC201202FC-V2 is the same as the general FETs. It follows the four-terminal configuration, composed of a source, a drain, a gate, and a substrate. In normal working conditions, the electrons flow from the source to the drain through a thin silicon film formed by the substrate and the gate. When sufficient voltage is applied to the gate, the conducting channel is formed between the source and drain, providing the current conduction.
The PXAC201202FC-V2 is especially suitable for high-gain and low-power applications with high linearity. It also offers other features important to an RF amplifier, such as low distortion and low noise. This product can be directly used to operate in the frequency range from 800MHz to 2.5GHz, with the output power up to 26dBm. Due to its ultra-low power consumption, the product can significantly extend the battery life of the devices that incorporate this product.
The PXAC201202FC-V2 has wide applications in the modern consumer electronics. Its high gain, low noise, and low power consumption make it ideal for RF power amplifiers in various electronic products. Its wide frequency range, high linearity, and high temperature range offer high reliability and efficiency for the RF amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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