PXAC261212FC-V1-R0 Discrete Semiconductor Products

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PXAC261212FC-V1-R0 application field and working principle

PXAC261212FC-V1-R0 is a small signal MOSFET transistor designed for radio frequencies (RF) applications. It is a power enhancement MOSFET transistor typically designed to operate in Class A and B operation with multiple drain currents. The PXAC261212FC-V1-R0 is optimized for high frequency switching and amplification in the 1-4.2 GHz range. It is available in the Dual 2x2 MMIC package.

Characteristics

The PXAC261212FC-V1-R0 has a maximum drain current rating of 3.8A and a maximum drain-source breakdown voltage of 22V. It is capable of operating at temperatures ranging from -55°C to 150°C. This transistor also features a maximum total gate charge of 17nC and a maximum capacitance of 4.2 pF. It also features a minimum break-down voltage of 12V.

Working Principle

The PXAC261212FC-V1-R0 operates on the principle of Field-Effect Transistors (FETs). FET transistors are three-terminal devices that are composed of a semiconductor material with a gate, a source, and a drain. They are voltage-controlled devices, meaning that the current flowing through the transistor is controlled by the voltage applied to the gate terminal. In the PXAC261212FC-V1-R0, the drain voltage and the gate voltage are unequal, thus creating an electric field between the two terminals. This electric field helps to control the current flowing through the transistor and also helps to amplify the current.

Applications

The PXAC261212FC-V1-R0 is designed for radio frequency (RF) applications. It is suitable for use in switch mode power supplies (SMPS), digital communication systems, FM radio equipment, and other RF applications. As it is a power enhancement MOSFET, it is also ideal for applications requiring higher power loads such as audio amplification and robotics. The PXAC261212FC-V1-R0 is also ideal for use in switching and amplification in the 1-4.2 GHz range.

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