PXAC201602FC-V1-R0 Discrete Semiconductor Products

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PXAC201602FC-V1-R0 is a type of field effect transistor (FET) which belongs to the radio frequency (RF) category. A field effect transistor is a semiconductor device that exploits the behavior of electrical charge in an electric field. It is one of the major types of transistors and it comes in a variety of shapes, sizes and application fields. The PXAC201602FC-V1-R0 is an N Channel enhancement-mode Metal Oxide Semiconductor (MOS) FET that can be used for applications in a wide range of frequency bands, from 0.1 to 10GHz.

This specific FET has a wide range of operational characteristics that are suitable for use as a receiver and transmitter in RF applications such as short-range wireless communications. It has a drain current rating of 0.2 A, which makes it suitable for high frequency applications, as well as a drain voltage rating of 12 V, making it suitable for both low and high power applications. Also, this FET generally has a low noise figure, making it useful for low-noise amplification of weak signals.

The working principle of this FET is similar to other field effect transistors. It contains a source, a drain, and a gate which are all connected internally. When a positive voltage is applied to the gate, the voltage across the source and the drain is reduced, accessing the N-type material beneath the gate. This in turn provides a pathway for a current to flow freely between the source and the drain, thus allowing it to be used as an amplifier. The current and voltage ratings of the PXAC201602FC-V1-R0 can also be modified by altering the voltage supplied to the gate.

In conclusion, the PXAC201602FC-V1-R0 is an N Channel enhancement-mode Metal Oxide Semiconductor (MOS) FET that is suitable for a wide range of radio frequency applications. This FET is suitable for both low and high power applications, and it has a low noise figure, making it useful for low-noise amplification of weak signals. The working principle of this FET is similar to other field effect transistors and involves applying a positive voltage to the gate to reduce the voltage across the source and the drain and thus allow current to flow freely between the source and the drain.

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