PXAC261202FCV1R250XTMA1

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PXAC261202FCV1R250XTMA1 is a high-performance radio-frequency (RF) metal-oxide-semiconductor field-effect transistor (MOSFET). As a type of transistor, an MOSFET has three terminals -- the drain, gate and source -- which are connected to an electric circuit. When a small voltage is applied to the gate, it induces an electric field in the channel between source and drain, controlling the flow of current between them.

The PXAC261202FCV1R250XTMA1 MOSFET is a N-channel electron device, meaning that its current flow is from source to drain when the gate is activated. It is capable of sustaining high drain-source voltages up to 250 volts, and can handle pulsed drain currents up to 225 amps.

The device is well-suited to applications requiring very low gate charge, such as RF communication in consumer electronics and other high-speed communications. It is also well-suited to applications where high levels of on-state resistance are needed; when the gate is activated, the transistor will draw very high drain-source electrical currents with very low gate-source voltages.

The PXAC261202FCV1R250XTMA1 is also capable of operating at frequencies up to 1.5GHz. This makes it ideal for microwave applications, where it can be used for amplifying high-frequency signals with minimal noise. The high oxide-layer-thickness between the source and the gate allows for low leakage current, even when exposed to high temperatures, and can also provide immunity to strong electromagnetic interference.

The PXAC261202FCV1R250XTMA1 has a small package size of 2.6 mm x 0.6 mm, making it suitable for applications where space is limited. It also has low gate capacitance, reducing power dissipation and thermal losses in a circuit. Additionally, the PXAC261202FCV1R250XTMA1 has an Ultra Low Gate Impedance, which can help reduce circuit noise and increase efficiency.

The PXAC261202FCV1R250XTMA1 is an excellent choice for applications such as RF signal and power amplifiers, transmitters and receivers, and switching circuits. It is also ideal for automotive and medical electronics. Thanks to its low gate charge, low gate leakage current, and high power-dissipation ratings, the PXAC261202FCV1R250XTMA1 provides superior performance in a wide range of applications.

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