Allicdata Part #: | PXAC261202FCV1S250XTMA1-ND |
Manufacturer Part#: |
PXAC261202FCV1S250XTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | FET RF 2CH 65V 2.61GHZ |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 230mA 2.... |
DataSheet: | PXAC261202FCV1S250XTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 2.61GHz |
Gain: | 13.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 230mA |
Power - Output: | 28W |
Voltage - Rated: | 65V |
Package / Case: | H-37248-4 |
Supplier Device Package: | H-37248-4 |
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The PXAC261202FCV1S250XTMA1 is a type of Field Effect Transistor (FET) used for radio frequency (RF) applications. FETs are semiconductor devices with three terminals, used to control the flow of electrical current from one circuit to another. The PXAC261202FCV1S250XTMA1 has the unique capability of amplifying low frequencies while rejecting high frequencies, making it ideal for use in RF applications.
The working principle of the PXAC261202FCV1S250XTMA1 is based on the fact that it is a unipolar device, meaning that it only has one polarity, unlike a conventional transistor which has two. The FET consists of three regions - the source, the drain, and the gate. The source and drain are both connected to the outside circuit and act as the FET’s power terminals. The gate is a voltage-controlled transistor with no current flowing through it. When the drain-to-source voltage is lower than the gate voltage, the FET is said to be “on”, allowing current to flow from the source to the drain. When the drain-to-source voltage is higher than the gate voltage, the FET is said to be “off”, preventing current from flowing.
The PXAC261202FCV1S250XTMA1 is primarily used in RF applications in which the need for high frequency amplification is required. For example, it can be used in radio designs, cell phone antennas, or other high frequency circuits as it is able to amplify both weak and strong signals. It is also used in audio circuitry, such as amplifiers and filters, as it provides superior filtering capabilities.
Due to its high frequency capability, the PXAC261202FCV1S250XTMA1 is capable of handling up to 250 volts, making it very well suited for use in high voltage circuits. Additionally, it is capable of operating at temperatures ranging from - 40°C to 85°C. The low capacitance nature of the FET also makes it an ideal choice for use in high speed applications where high frequency signals need to be amplified in a power-efficient manner. Some of the most common applications include power management, motor drives, and data storage.
Overall, the PXAC261202FCV1S250XTMA1 is an ideal choice for many RF and audio applications due to its superior filtering capabilities and ability to handle high frequencies. With its low capacitance nature, it is also well suited for use in high speed applications. It is reliable, efficient, and cost-effective, making it a great choice for any application that requires high frequency filtering.
The specific data is subject to PDF, and the above content is for reference
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