PXAC261002FC-V1-R250

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The PXAC261002FC-V1-R250 is an RF power transistor from Renesas, specifically designed for use in high-speed communication systems. The device is based on a silicon-carbide enhancement mode MOSFET process, which offers high speed switching and excellent RF performance. The PXAC261002FC-V1-R250 is also very efficient and is suitable for a wide range of applications including power amplifiers, HF modulators/demodulators, and digital phase-locked loop (DPLL) applications.

The PXAC261002FC-V1-R250 offers a wide range of features, including low power dissipation, fast switching, high efficiency and high operating temperature. The device is also able to operate at very low noise levels, making it suitable for use in low-noise environments. In addition, the PXAC261002FC-V1-R250 has an integrated thermal-sensing capability, making it suitable for applications where precise temperature control is required.

The device has an operating voltage range of 8-17V and a maximum power output of 250W. The high power output makes it suitable for high-power applications, such as broadband wireless access systems, military radio systems and base station amplifiers. The PXAC261002FC-V1-R250 is also rated for a maximum collector current of 7A.

The PXAC261002FC-V1-R250 is a high-speed device, with a typical switching speed of 2.5GHz. This makes it suitable for applications requiring a fast response time, such as fast frequency hopping systems and digital phase-locked loops. The device is also capable of operating in a wide frequency range, from 2GHz to 6GHz, making it suitable for a wide range of applications.

The PXAC261002FC-V1-R250 has an excellent linearity performance, with a low third-order intermodulation distortion figure of -48dBc. This ensures that the device is suitable for use in communication systems which require very low amounts of distortion, such as cellular networks and Wi-Fi networks.

The PXAC261002FC-V1-R250 is a high-performance RF transistor with a wide range of features and performance specifications. It is designed to be used in high-speed communication systems, power amplifiers, HF modulators/demodulators and digital phase-locked loop applications. The device is also capable of operating in a wide frequency range and is suitable for applications which require low noise and accurate temperature control. The PXAC261002FC-V1-R250 is a reliable and efficient RF power transistor, suitable for a wide range of applications.

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