QS5U12TR Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.5V @ 1mA
Package / Case:	SOT-23-5 Thin, TSOT-23-5
Supplier Device Package:	TSMT5
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1.25W (Ta)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	175pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	3.9nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	100 mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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：<h2>QS5U12TR application field and working principle </h2>The QS5U12TR transistor is one of the best-selling transistors of all time and it is widely used in electronic engineering due to its high performance, low cost, and reliability. This type of transistor is classified under the category of FETs, MOSFETs – Single and it is a type of power electronic device designed to amplify high-voltage, low-current signals. It is also used in power switching applications.The QS5U12TR transistor works on the principle of field-effect transistors (FETs). FETs are unipolar devices, meaning they are controlled by one voltage or current. The function of the transistor is to act as a current switch, controlling the flow of current between the two electrodes.In the case of the QS5U12TR transistor, the two electrodes are the gate and the drain. The gate is supplied with a voltage, which is applied to the channel in between the two electrodes. This voltage modulates the current flowing between the two electrodes. When the voltage is increased, the current also increases. On the other hand, when the voltage is reduced, the current also decreases. This phenomenon is called the drain-source voltage-current characteristic of the transistor.In power switching applications, the QS5U12TR transistor is typically used as a switch for large currents. It can be used in the following types of applications: power switching, motor drive, high-speed signal circuits, telecommunication systems, and low-noise circuits. In telecommunication systems, it is used as an amplifier for switches.In terms of its circuit structure, the QS5U12TR transistor has four terminals. The three main terminals are the gate, the source, and the drain. The fourth terminal is the body, which is the location of the control electrode. When the transistor is in operation, the gate receives a control voltage, while the source and drain form the two legs of the switch.In digital logic applications, the QS5U12TR transistor can be used as a digital switch. It can be used in digital logic gates, as it provides isolation between two logic levels. For example, when a digital signal is given to the gate, it will turn the transistor on or off depending on the voltage applied. In this way, it can be used to control the flow of electricity in circuits and can be used to build complex digital logic functions like memory and arithmetic circuits.In power circuits, the QS5U12TR transistor can be used in a wide variety of applications such as switching, motor drives, and current regulation. It serves as an integrated switch, enabling the control of high-voltage and high-current switching applications. It is also used in power converters, power control systems, and high-power amplifiers, as it offers high-efficiency and high-power switching.In summary, the QS5U12TR transistor is a versatile device that is widely used in a variety of electronic engineering applications. It is a unipolar device that works on the principle of FETs, as it is able to modulate the current flow between the two electrodes by applying a voltage to the gate. It is used in digital logic circuits, power circuits, and telecommunications applications. Furthermore, it is a low-cost and reliable transistor that offers high performance and is suitable for a variety of high-voltage, high-current switching applications.

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