QS5U17TR Discrete Semiconductor Products

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The QS5U17TR is a single N-channel MOSFET. This device utilizes state-of-the-art vertical trench technology to provide excellent R DS(on) in a small surface-mount package, making it attractive for applications where board space and efficiency are of primary concern. The QS5U17TR is also RoHS compliant and has better immunity to latch-up than traditional FETs. This application note will discuss the applications and working principles of the QS5U17TR.

Applications

The QS5U17TR is an ideal power switch for low-power loads. In the linear region of operation, it can be used to smoothly adjust the voltage or current of a load as per the demand, and in the switching region, it can be used for applications such as load switching, pulse width modulation, and AC/DC conversion. It can also be used in switching converters, voltage regulators, and other power management applications.

Another key application of the QS5U17TR is in providing intelligent control solutions in medical, automotive, and industrial systems. In such situations, the MOSFET is capable of switching various loads remotely or autonomously depending on the input signals. This way, the MOSFET can be used to control various systems remotely and/or autonomously.

Working Principle

A MOSFET is an insulated-gate field-effect transistor (IGFET) that utilizes the field effect controlled by a gate region to control the current between drain and source. Unlike regular transistors, a MOSFET does not require a base current and its operation is driven by the electric field instead of the base current. In the case of the QS5U17TR, it is a N-channel MOSFET having N-type source and drain regions separated by a P-type substrate. When the gate is at low voltage, the PN junction diode between the source and the drain is reversed biased and current is blocked. Thus, it is in OFF state.

When the gate is at a higher voltage (Vgs) than the source, it creates an inversion layer between the drain and the source. This reduces the resistance between the drain and the source, thereby allowing current to flow through it. The on-state resistance (Rds) of the device is determined by the resistance of the inversion layer. The QS5U17TR uses the state-of-the-art vertical trench technology, which reduces the on-state resistance.

The QS5U17TR is a single-channel device, meaning it can control only one load. However, in some applications, multiple load switching is required and this can be achieved by using multiple QS5U17TR MOSFETs connected in parallel. This will allow multiple loads to be controlled with a single input signal.

Conclusion

The QS5U17TR is a single N-channel MOSFET device that is useful in a variety of applications. It utilizes state-of-the-art vertical trench technology to provide excellent RDS (on) in a small surface-mount package. The QS5U17TR is an ideal device for low-power loads, voltage regulators, switching converters, and other power management applications. The QS5U17TR is also RoHS compliant and has better immunity to latch-up than traditional FETs. The basic operating principle of the QS5U17TR is based on the insulated-gate field-effect transistor (IGFET), which uses the field effect controlled by a gate region to control the current between drain and source.

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