QS5U33TR

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The QS5U33TR is a n-channel enhancement-mode field-effect transistor (FET). It is a single transistor of a new generation of power MOSFETs with extremely low on-state resistance. This device also has a very good overall combination of fast switching speed, low gate charge and threshold voltage.

The QS5U33TR device is particularly suitable for applications on microcontrollers due to its improved on-resistance and the wide gate drive range. It provides enhanced protection with high static and dynamic drain-source breakdown voltages, as well as advanced logic level shifts from gate to source and from gate to drain. Additionally, this device has low reverse transfer capacitance which allows for reduced voltage and energy losses in low and high frequency switching processes.

The application field of this device includes power conversion, e-mobility, industrial, automotive, computing and consumer industries. Common applications include power supplies, DC/DC converters, systems using high current switching and applications where low voltage and high current are required. It can be used in both 5V and 24V systems.

The working principle of the QS5U33TR is based on the standard FET configuration of source, gate, and drain. When a voltage is applied between the gate and the source, an electric field will be generated that modulates to a certain level the conductivity of the channel between the drain and the source. As a result of this, the voltage drop between these two terminals will be much lower than it would be when using a regular bipolar junction transistor.

This device has an advanced internal source-to-drain diode, which limits the reverse flow of current during the turn-off operation, while the integrated Fast Turn-off feature slightly turns-off the device when the voltage between the gate-source and the drain-source exceeds the respective threshold. This reduces power losses and allows for faster switching times.

The QS5U33TR is an ideal choice for applications requiring extremely low on-state resistance, high switching speed and low gate charge, as it can deliver significant improvements in current and power consumption compared to standard transistors.

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