QS5U26TR Discrete Semiconductor Products

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QS5U26TR is a kind of insulated-gate field-effect transistor (IGFET) which belongs to the MOSFET family. It is a power MOSFET that offers low on-state resistance and low gate charge. The MOSFETs in this family are designed to withstand high voltage and can work in extreme environments, allowing them to be used in wide variety of applications. The creative design enables robust operation in applications such as switching power supplies, telecom, and motor drives. The QS5U26TR is available in TSSOP-8, TO-220, SOT-223,TO-263, and other packages.

An IGFET is a three-terminal device in which the gate terminal is electrically insulated from the other two. It works as a switch and is mainly classified as an N-channel or P-channel device. The gate terminal is activated by a voltage level that opens a “pinch off” in the channel which enables current to flow from the source to the drain terminal. The N-channel MOSFET is more commonly used due to its lower forward voltage drop, higher efficiency, and higher current-carrying capacity. They are also known for their fast switching speed and low power loss. On the other hand, the P-channel MOSFETs have higher forward voltage drop, but are less efficient and have lower current-carrying capacity than the N-channel type.

The QS5U26TR, a single N-channel MOSFET, usually has a maximum drain-source breakdown voltage of 20V, and a drain-source on-state resistance of 20 mohm (at 10V, 4A). It also has an continuous drain current of 30A, and a drain-source capacitance of 1630 pF (at 4.5 V). It works in a -55°C to +150°C temperature range, and has a maximum gate threshold voltage of +4V. The features of this type of MOSFET makes it a suitable device for use in motor drive applications, switch power supplies, and other high-power devices.

When using the QS5U26TR, the DC power supply, the gate resistor, and the drain source output are connected together. The gate resistor will usually connect the gate to the source which provides the necessary voltage level the MOSFET needs to operate. The source of the MOSFET will be connected to the ground, while the drain will be connected to the load or output. The connection and gate resistor will help to prevent the MOSFET from overflowing due to an overvoltage applied to the gate. The gate connection also controls the resistance of the channel and can be used to modulate the channel for more efficient and effective operation of the MOSFET. When a voltage is applied to the gate, it will allow current to flow from the source to the drain. The higher the gate voltage, the greater the current flow in the channel, and the easier it is to open. The threshold voltage for the device must be exceeded for the device to be opened and for the current to start flowing in the channel.

The QS5U26TR is an ideal device for use in applications such as power supplies, telecom devices, motor drives, and other high-power applications. It offers a low on-state resistance and low gate charge, making it suitable for high efficiency and easy operation. Its low power loss and fast switching speed makes it a good choice for applications where higher speeds are needed. The high voltage withstanding capability and its ability to properly operate in extreme environments allows it to be used in a variety of applications. Therefore, the QS5U26TR is a suitable choice for any application that requires an insulated-gate field-effect transistor.

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