QS5U21TR Discrete Semiconductor Products |
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Allicdata Part #: | QS5U21TR-ND |
Manufacturer Part#: |
QS5U21TR |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 1.5A TSMT5 |
More Detail: | P-Channel 20V 1.5A (Ta) 1.25W (Ta) Surface Mount T... |
DataSheet: | QS5U21TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.16914 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | SOT-23-5 Thin, TSOT-23-5 |
Supplier Device Package: | TSMT5 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 325pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 4.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The QS5U21TR is a highly reliable and efficient MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to provide consistent levels of switching performance under high current load conditions.
MOSFETs are typically three terminal active devices that employ a thin metal oxide layer between the positive gate and the negative substrate. This layer serves to separate the two kinds of electrical charge, requiring an input, or "gate" potential to induce a change in the device\'s operation, a process called gating.
The QS5U21TR is part of a group of FETs, or field effect transistors, that are commonly used for switching digital signals in synchronous digital circuits. FETs are able to switch higher power levels, providing greater speed than other types of devices. Some of the other FETs in this particular family include N-channel devices, MOSFETs, JFETs, and Bipolar transistors.
The QS5U21TR is capable of switching as much as 2 amps of current, making it well suited for a variety of high-power applications such as motor control, power supplies, and power conversion. When used in a switching circuit, the device can serve as an adjustable switch capable of regulating current flow and providing protection against over-current and power surges.
The QS5U21TR is a single switch FET, meaning that it only has one gate terminal separating the two power terminals (source and drain). This makes it ideal for applications that require a single electrical connection. It also has an adjustable gate voltage, which allows the user to quickly adjust the switching speed and power output.
The device is well-suited for complex circuits and systems because it can be used as a digital or analog switch. This allows it to be used in systems with multiple input and output signals, allowing multiple devices to be interconnected with ease.
The QS5U21TR is particularly useful for high-powered applications, such as motor control, where it is important to have a reliable, safe and consistent source of power. Its reliable switching characteristics also make it an ideal choice for applications such as power supplies and converters, where efficiency and reliability are paramount.
The QS5U21TR is a highly reliable and efficient MOSFET design that provides consistent levels of switching performance under high current load conditions. Its adjustable gate voltage allows for flexibility in applications such as motor control, power supplies, and power conversion. Additionally, its single-switch construction makes it ideal for use in complex systems where it is important to be able to control multiple signals with ease.
The specific data is subject to PDF, and the above content is for reference
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