QS5U28TR Allicdata Electronics
Allicdata Part #:

QS5U28TR-ND

Manufacturer Part#:

QS5U28TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 20V 2A TSMT5
More Detail: P-Channel 20V 2A (Ta) 1.25W (Ta) Surface Mount TSM...
DataSheet: QS5U28TR datasheetQS5U28TR Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSMT5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The QS5U28TR is a great example of an enhancement-mode, N-channel MOSFET that offers a wealth of features and benefits to improve device performance. The QS5U28TR has a wide variety of applications in electronics and can be used to control or switch electrical signals.

QS5U28TR Application Field

The QS5U28TR is used in a variety of applications, including:

  • Motor and solenoid control
  • Relay driver applications
  • Audio and video switching
  • Battery management
  • Power control
  • Switched Mode Power Supplies (SMPS)
  • High-Voltage and High-Current circuits

The QS5U28TR is designed for automotive and industrial applications, due to its wide operating temperature range of -55°C to 150°C. As a result, it can be used in applications where power density is critical, such as motor control and battery management.

QS5U28TR Working Principle

The QS5U28TR MOSFET is an enhancement-mode device that utilizes a metal oxide semiconductor (MOS) as the gate electrode. This allows for very low gate-drain capacitance, which can lead to low turn-on and low-loss switching characteristics.

The MOSFET behaves like a voltage-controlled transistor, with its gate voltage controlling the current that flows from the source to the drain. Due to its extremely low on-resistance, high current can be switched with a very low gate voltage, which minimizes power losses in the device. In addition, the device has a very low input capacitance, making it well-suited for driving compact loads, such as relays and solenoids.

The QS5U28TR MOSFET is useful in a variety of applications due to its low gate capacitance and low on-resistance. The device also offers stable operation and excellent protection against noise, making it an ideal choice for power control and switching applications.

The specific data is subject to PDF, and the above content is for reference

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