Allicdata Part #: | QS5U16TR-ND |
Manufacturer Part#: |
QS5U16TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 2A TSMT5 |
More Detail: | N-Channel 30V 2A (Ta) 900mW (Ta) Surface Mount TSM... |
DataSheet: | QS5U16TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | SOT-23-5 Thin, TSOT-23-5 |
Supplier Device Package: | TSMT5 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 900mW (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 175pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 3.9nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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QS5U16TR Application Field and Working Principle
QS5U16TR are advanced power MOSFETS with ultra low on-resistance and ultra fast switching performance, making them ideal for a variety of applications. In this article, we will explore the applications, as well as the MOSFET’s working principle, for the QS5U16TR.
Applications
QS5U16TR is a perfect choice for power applications. Due to its ultra low on-resistance, it can be used in applications that require high efficiency power conversion, such as switching power supplies, motor control, energy conversion, automotive applications and more. In addition, the ultra fast switching makes the QS5U16TR ideal for high speed switching and low noise, high EMI applications.
The QS5U16TR is also suitable for applications that require low input capacitance, such as high frequency circuits, high-speed digital logic and many others. It has a low input gate capacitance of about 1.4nF, making it an ideal choice for applications that need fast response and detection times.
Due to its ultra low on-resistance and ultra fast switching performance, the QS5U16TR is also suitable for a variety of industrial and medical applications, such as AC/DC converters, LED lighting, medical device monitors and so on.
Working Principle
MOSFETS, or Metal Oxide Semiconductor FETs, are semiconductor components that are based on the field effect-transistor concept. Basically, it consists of a source, a drain, and a gate, where the electrical characteristics (i.e. resistance, capacitance, and so on) of the MOSFET are determined by the voltage applied to the gate.
The QS5U16TR MOSFET is a P-channel MOSFET, meaning that the current is driven through the channel by a voltage applied to the gate. When the voltage applied to the gate is negative, the channel is closed and no current flows, resulting in an OFF status. When the voltage applied to the gate is positive, the channel is opened and a current will flow through it, resulting in an ON status.
The on-resistance, or RDS(ON), of the QS5U16TR MOSFET is exceptionally low, making it an ideal choice for high efficiency applications. The RDS(ON) will be affected by the voltage applied on the gate and the current flowing through the channel. The QS5U16TR is also known for its ultra fast switching performance, allowing it to switch with less than 5 nanoseconds.
Conclusion
The QS5U16TR is a perfect choice for many power applications, thanks to its low on-resistance and ultra fast switching performance. It is suitable for applications that require fast response time, low input capacitance, high efficiency switching, and so on. As for its working principle, the QS5U16TR is a P-Channel MOSFET, where the on-resistance, or RDS(ON), is controlled by the voltage applied to the gate, and the current passing through the channel.
The specific data is subject to PDF, and the above content is for reference
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