Allicdata Part #: | QS5U27TR-ND |
Manufacturer Part#: |
QS5U27TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 1.5A TSMT5 |
More Detail: | P-Channel 20V 1.5A (Ta) 1.25W (Ta) Surface Mount T... |
DataSheet: | QS5U27TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | SOT-23-5 Thin, TSOT-23-5 |
Supplier Device Package: | TSMT5 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 325pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 4.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The QS5U27TR is a N-Channel MOSFET transistor designed to be used as a switch. It is a single-transistor type of field-effect transistor (FET), also known as an insulated-gate field-effect transistor. It has a high-voltage rating of 500V, a maximum drain current of 5 amps, and an on-resistance of 0.0027 Ohms. It is available in a TO-220F (Fullpack) package.
The QS5U27TR\'s most common application is to switch high-power electrical currents quickly and efficiently. It is often used to control the switching of high-voltage or high-current loads, such as motors and lighting, in appliances and industrial equipment. It can also be used in power-supply circuits, switching circuits and audio amplifiers.
The operation of a MOSFET follows a similar principle to other forms of FETs. When the gate voltage of the MOSFET is positive, charge carriers (electrons or holes) flow from the source to the drain, forming a conductive channel through the transistor. This enables current to flow between the drain and source pads. When the gate voltage is switched off, the charge carriers no longer flow, and therefore current is no longer able to flow.
The QS5U27TR has an additional advantage over many other types of field-effect transistors because of its low on-resistance. This relatively low resistance reduces the amount of current lost in the channel, allowing for more efficient current switching. Furthermore, the transistor\'s high-voltage rating makes it possible to switch both high voltage and high current with ease.
In conclusion, the QS5U27TR is a versatile single-transistor field-effect transistor that is ideal for controlling the switching of high-voltage or high-current loads. Its low on-resistance and high-voltage rating make it an excellent choice for power-supply, switching, and audio amplifier circuits.
The specific data is subject to PDF, and the above content is for reference
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