QS5U23TR

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	SOT-23-5 Thin, TSOT-23-5
Supplier Device Package:	TSMT5
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1.25W (Ta)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	325pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	4.2nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	200 mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	1.5A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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QS5U23TR Application Field and Working Principle

Transistors - FETs, MOSFETs - Single

QS5U23TR, a super-low threshold MOSFET (metal-oxide semiconductor field-effect transistor) is produced by QS Technologies. It is designed for use in computers, cellular phones, digital cameras and other devices requiring enhanced power efficiency. This MOSFET also offers superior switching performance and superior safety.The application field of this particular MOSFET device is mainly used for switching digital signals in circuits. In addition, it can provide a very low voltage level for higher noise immunity. It is used in various circuits such as amplifiers, switching power supplies and computer system controllers. It is also used in the fast switching of contactors, solenoids and other high power devices.This type of MOSFET works by controlling the current flow through a semiconductor channel. A gate voltage is applied to the channel which adjusts its channel width, thereby controlling the amount of current flowing in and out of the channel. The gate voltage is typically applied through an external voltage source. As the gate voltage is increased, the channel width narrows and the current flow increases. A decrease in the gate voltage will increase the channel width and decrease the current flow.The MOSFET also features low threshold voltage, enabling the device to work with low supply voltages. This makes it suitable for use in circuits with high power loads. Its very low on-resistance also allows it to provide better efficiency in the use of energy.The QS5U23TR MOSFET is primarily used in circuits operating at high frequencies and requiring low switching times. It is also used in applications requiring high current switching, such as in power supplies, amplifiers and computers.The MOSFETs are made of a range of materials such as gallium arsenide, silicon, gallium nitride, zinc oxide and aluminium gallium nitride (AGN). The material used for the device depends upon the type of application for which it is used.In summary, the QS5U23TR MOSFET is a super-low threshold MOSFET device designed for use in circuits requiring enhanced power efficiency, superior switching performance and superior safety. The MOSFET works by controlling the amount of current flowing, through a semiconductor channel, by adjusting its channel width through a applied gate voltage. The MOSFET is most commonly used in circuits operating at high frequencies and require low switching times and in circuits with high power loads.

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