R1LV0108ESF-5SI#S0 Allicdata Electronics
Allicdata Part #:

R1LV0108ESF-5SI#S0-ND

Manufacturer Part#:

R1LV0108ESF-5SI#S0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 1M PARALLEL 32TSOP
More Detail: SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-TS...
DataSheet: R1LV0108ESF-5SI#S0 datasheetR1LV0108ESF-5SI#S0 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP (8x20)
Base Part Number: R1LV0108E
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an integral part of computer systems, providing fast and efficient data storage, retrieval and manipulation. The R1LV0108ESF-5SI#S0 is one such memory solution, designed specifically for the most demanding applications. In this article, we will explore the application field and working principle of the R1LV0108ESF-5SI#S0.

The R1LV0108ESF-5SI#S0 is a high-density dynamic RAM (DRAM) that offers industry leading random access times. This makes it ideal for applications that require fast storage and retrieval of data, such as gaming, video editing and data centers. The R1LV0108ESF-5SI#S0 also features low power consumption, making it a low cost, energy efficient solution for these types of applications.

The R1LV0108ESF-5SI#S0 is designed to store large amounts of data in a small form factor. It achieves this by using a matrix of memory cells, each containing one bit of information. This information can be fetched or stored quickly and easily, making it ideal for applications that require high memory access speeds. As a DRAM, the R1LV0108ESF-5SI#S0 also stores data using an array of capacitors, which serve to retain the data stored in the memory cells.

The R1LV0108ESF-5SI#S0 can also be used in situations where fast data access is not as critical. It can be used as a low latency, low power solution in applications such as web servers, network storage, and virtualization. The design of the memory array also makes it suitable for applications where extremely large amounts of data are stored or used frequently.

The working principle behind the R1LV0108ESF-5SI#S0 is to provide fast access to data stored in its memory cells. A memory controller manages the flow of data in and out of the memory, enabling the memory cells to cycle rapidly between the two states of data storage (read and write). Data is transferred between the memory controller and the RAM by a bus system, which allows for fast transfer speeds.

Data is written to and read from the memory cells in two main ways. The first is via the bus system, where data packets are sent from the memory controller. The second is via data lines, which are used to transmit data directly between the memory cells and the memory controller. These two methods enable the RAM controller to retrieve data from the memory cells with minimal latency.

In addition to providing fast data access, the R1LV0108ESF-5SI#S0 is designed to reduce power consumption. The memory cells are small, allowing them to require less energy to read and write data. It is also capable of providing power savings through its standby mode, which saves energy when the system is not active. This can help to increase the life of the system, providing savings in terms of cost and energy.

The R1LV0108ESF-5SI#S0 is a dynamic random access memory (DRAM) solution, designed to provide fast storage and retrieval of data. It is ideal for demanding applications such as gaming, video editing and data centers, providing fast access and low power consumption to reduce cost and energy consumption. It is also suitable for applications where large amounts of data, or data frequently accessed, are used.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "R1LV" Included word is 40
Part Number Manufacturer Price Quantity Description
R1LV5256ESP-5SI#B0 Renesas Elec... 4.81 $ 317 IC SRAM 256K PARALLEL 28S...
R1LV1616RSD-7SI#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 16M PARALLEL 52TS...
R1LV0108ESN-5SR#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32SOP...
R1LV0108ESN-5SR#S0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32SOP...
R1LV0108ESN-7SI#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32SOP...
R1LV0108ESN-7SI#S0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32SOP...
R1LV0108ESN-7SR#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32SOP...
R1LV0108ESN-7SR#S0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32SOP...
R1LV3216RSA-5SI#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 32M PARALLEL 48TS...
R1LV3216RSA-5SR#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 32M PARALLEL 48TS...
R1LV3216RSA-5SR#S0 Renesas Elec... 0.0 $ 1000 IC SRAM 32M PARALLEL 48TS...
R1LV3216RSA-7SR#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 32M PARALLEL 48TS...
R1LV3216RSA-7SR#S0 Renesas Elec... 0.0 $ 1000 IC SRAM 32M PARALLEL 48TS...
R1LV5256ESA-5SI#B1 Renesas Elec... 2.66 $ 1000 IC SRAM 256K PARALLEL 28T...
R1LV0108ESA-5SI#B1 Renesas Elec... 2.66 $ 1000 IC SRAM 1M PARALLEL 32STS...
R1LV0108ESF-5SI#B1 Renesas Elec... 2.66 $ 1000 IC SRAM 1M PARALLEL 32TSO...
R1LV0216BSB-5SI#B1 Renesas Elec... 3.25 $ 1000 IC SRAM 2M PARALLEL 44TSO...
R1LV3216RSA-5SI#B1 Renesas Elec... 22.72 $ 1000 IC SRAM 32M PARALLEL 48TS...
R1LV0108ESA-5SI#S1 Renesas Elec... 1.93 $ 1000 IC SRAM 1M PARALLEL 32STS...
R1LV0108ESF-5SI#S1 Renesas Elec... 1.93 $ 1000 IC SRAM 1M PARALLEL 32TSO...
R1LV0208BSA-5SI#B1 Renesas Elec... 3.25 $ 1000 IC SRAM 2M PARALLEL 32STS...
R1LV0208BSA-5SI#S1 Renesas Elec... 2.35 $ 1000 IC SRAM 2M PARALLEL 32STS...
R1LV0216BSB-5SI#S1 Renesas Elec... 2.35 $ 1000 IC SRAM 2M PARALLEL 44TSO...
R1LV3216RSA-5SI#S1 Renesas Elec... 15.91 $ 1000 IC SRAM 32M PARALLEL 48TS...
R1LV5256ESA-5SI#S1 Renesas Elec... 1.93 $ 7022 IC SRAM 256K PARALLEL 28T...
R1LV0108ESA-5SI#S0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32STS...
R1LV0108ESF-5SI#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32TSO...
R1LV0108ESF-5SI#S0 Renesas Elec... -- 1000 IC SRAM 1M PARALLEL 32TSO...
R1LV0108ESF-5SR#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32TSO...
R1LV0108ESF-5SR#S0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32TSO...
R1LV0108ESF-7SI#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32TSO...
R1LV0108ESF-7SI#S0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32TSO...
R1LV0108ESF-7SR#B0 Renesas Elec... -- 1000 IC SRAM 1M PARALLEL 32TSO...
R1LV0108ESF-7SR#S0 Renesas Elec... 0.0 $ 1000 IC SRAM 1M PARALLEL 32TSO...
R1LV0208BSA-5SI#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 2M PARALLEL 32STS...
R1LV0216BSB-5SI#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 2M PARALLEL 44TSO...
R1LV0216BSB-7SI#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 2M PARALLEL 44TSO...
R1LV0408DSB-5SI#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 4M PARALLEL 32TSO...
R1LV0808ASB-5SI#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 8M PARALLEL 44TSO...
R1LV0808ASB-7SI#B0 Renesas Elec... 0.0 $ 1000 IC SRAM 8M PARALLEL 44TSO...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics