R1LV0108ESF-7SI#S0

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	32-TSOP (8x20)
Base Part Number:	R1LV0108E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memories are used to store and recall information that have been captured within a computer system. The R1LV0108ESF-7SI#S0 is a high-density, high-performance memory unit, specifically designed for industrial, automotive, telecommunications and networking applications. It is manufactured using advanced technologies that deliver high performance and reliability.The R1LV0108ESF-7SI#S0 employs a series of eight circuit paths which are referred to as ‘bits’, each capable of storing a single bit of information. These bits are connected in an array, with each column representing a data block and each row representing a memory address. This is referred to as a ‘2D array’, and is the basic structure for all memory units.The data stored in the R1LV0108ESF-7SI#S0 memory module is organised into ‘pages’, each consisting of eight bits. Pages are organised linearly, and each page can store 256 bytes of data. The memory module is capable of storing up to 4GB of data, depending on the configuration.Data is stored in the R1LV0108ESF-7SI#S0 memory module on the basis of time; this is referred to as ‘cycles’. When data is written to the module, it is written in a continuous loop, cycling through the pages and data blocks. This enables the module to access data in an effective and efficient manner.The data written to the memory module is organised into columns and rows, with each row representing a memory address. Each memory address contains a ‘word’, which is composed of four bytes of data. This means that each word can store a maximum of 32 bits of information.The R1LV0108ESF-7SI#S0 memory module is designed to provide reliable and rapid access to stored data. It employs a sophisticated algorithm that processes data in parallel, allowing for quick, simultaneous access to multiple words. This enables the module to respond to requests quickly and efficiently.The module is also designed to allow for error correction and data restoration. If the memory module detects an error in the data stored, it will attempt to correct the error by restoring the data from a set of redundant memory cells. This allows for reliable storage and retrieval of data even in extreme conditions.The R1LV0108ESF-7SI#S0 memory module is designed to meet the demands of high-performance applications and is well suited for industrial, automotive, telecommunications and networking applications. It has a high-density design, and can store up to 4GB of data, depending on the configuration. The module also provides efficient access to data, with a sophisticated algorithm that enables simultaneous access of multiple words. Finally, the module is designed to enable reliable data storage and retrieval, through its error correction and data restoration capability.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description