R1LV0816ASB-5SI#B0

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM
Memory Size:	8Mb (512K x 16)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II
Base Part Number:	R1LV0816A

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Introduction

The R1LV0816ASB-5SI#B0 memory is a low-power, high performance, and data-transferable memory chip. It is made from gallium-arsenide (GaAs), a range of semiconductor materials that offers superior physical properties in comparison to silicon-based alternatives. Developed by the global leader in memory and storage technology, the R1LV0816ASB-5SI#B0 was designed to be the most efficient and reliable memory on the market today.

Applications

The R1LV0816ASB-5SI#B0 can be used in a number of applications, ranging from consumer electronics to industrial applications. In consumer electronics, this memory chip is ideal for high-end gaming systems, digital video recorders, video surveillance systems, and more. Additionally, the memory chip can be utilized in industrial applications, such as embedded systems, motor control, and factory automation. Furthermore, the R1LV0816ASB-5SI#B0 is ideal for use in applications that require robust data storage and retrieval, such as medical and military applications.

Advantages

The R1LV0816ASB-5SI#B0 is a highly efficient, low-power memory solution. It is optimized for power-performance use, with a reliable, low-power consumption profile. This memory solution can be tailored to the exact requirements of each system, offering complete flexibility and reliability. Additionally, the R1LV0816ASB-5SI#B0 can offer highly reliable data storage and retrieval performance. It is capable of maintaining high performance with the lowest amount of power consumption. Furthermore, the R1LV0816ASB-5SI#B0 incorporates advanced data transfer technology. Data can be quickly and securely transferred between the memory chip and other components of the system. This allows for rapid system initialization and reconfiguration, with incredibly low latency. Additionally, the chip features industry-leading error correction and detection capabilities, ensuring that data transfers are secure and reliable.

Working Principle

The R1LV0816ASB-5SI#B0 memory chip is based on a gallium-arsenide (GaAs) substrate. This substrate is composed of gallium and arsenide atoms, along with dopants to modulate the electrical properties of the memory chip. This enables the memory chip to store data in an organized fashion with the highest amount of performance and efficiency. Once the data is written to the chip, it can be instructed to progress through various states. This is done through the use of variable-state transistors, which are embedded inside the chip. By varying the voltage on the transistors, the memory chip can change its state and access different regions of memory. This allows for faster data access and storage. The R1LV0816ASB-5SI#B0 memory chip is also designed for high speed data transfer. Specialized protocols have been developed to carry data between the chip and the rest of the system. By utilizing the advanced transfer technology of the chip, data can be quickly and securely transferred between components of the system.

Conclusion

The R1LV0816ASB-5SI#B0 is an advanced memory solution that utilizes the latest in technology. With its high-performance, low-power consumption profile, the R1LV0816ASB-5SI#B0 can be used in a wide range of applications, ranging from consumer electronics to industrial applications. Furthermore, this memory solution features advanced data transfer technology, allowing for the rapid and reliable transmission of data. The R1LV0816ASB-5SI#B0 is an ideal memory solution for those who require a reliable and versatile memory option.

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