R1LV1616RSD-5SI#B0

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• 1. R1LV1616RSD-5SI#B0 application field

R1LV1616RSD-5SI#B0 is a low-voltage 16Mb double data rate (DDR) synchronous DRAM (SDRAM), which is mainly used in low power consumer, communications and other related applications.

• 2. Features

The R1LV1616RSD-5SI#B0 offers low levels of power consumption, making it ideal for small form factor applications. This 8-bit SDRAM features a 16-bit wide data bus and allows for simultaneous access on both banks, allowing for concurrent instruction execution. TheR1LV1616RSD-5SI#B0 has two 16Mb of memory (32Mb total). The device runs at speeds of up to 200MHz and has an dimensions of 8mm x 8mm and a maximum operating temperature of 85°C.

• 3. Working principle

The R1LV1616RSD-5SI#B0 is a simple-to-use memory device. The data is written and read using a “bank-row-column” address scheme. When the address bits in the input register match the address bits in the row and column of the bank, then the data is read or written accordingly.

The R1LV1616RSD-5SI#B0 features an internal refresh counter that keeps track of the read/write cycles and refreshes the DRAM when required. The device also features an internal power-down feature that keeps the device in an ultra-low power mode when it is not actively being used.

The R1LV1616RSD-5SI#B0 is a DRAM that is based on a double data rate (DDR) architecture. It uses a clock speed of up to 200MHz, with a two-data-cycle transfer for every clock cycle. This allows for faster data transfer rates than single data rate (SDR) architectures.

• Conclusion

In summary, the R1LV1616RSD-5SI#B0 is a low voltage 16Mb DDR SDRAM memory device that is suitable for use in low power, consumer and communications applications. The device features an internal refresh counter and power down feature and supports a double data rate architecture that allows for faster data transfer rates than SDR architectures.

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