Allicdata Part #: | R1LV1616RBG-5SI#S0-ND |
Manufacturer Part#: |
R1LV1616RBG-5SI#S0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 16M PARALLEL 48FBGA |
More Detail: | SRAM Memory IC 16Mb (1M x 16) Parallel 55ns 48-FB... |
DataSheet: | R1LV1616RBG-5SI#S0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 16Mb (1M x 16) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFBGA |
Supplier Device Package: | 48-FBGA (7.5x8.5) |
Base Part Number: | R1LV1616R |
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?Introduction to R1LV1616RBG-5SI#S0
R1LV1616RBG-5SI#S0 is a type of advanced Dynamic Random Access Memory (DRAM). It is an integrated circuit-based memory used to store digital information, which is often referred to as cache memory, system memory, and main memory. DRAM is a type of volatile memory, meaning that it only holds data when the power is on; when the power is off, all data is lost.
Application Field
The R1LV1616RBG-5SI#S0 is an ideal choice for mission-critical applications, such as in medical devices, military equipment, and aerospace engineering. It is also suitable for industrial medium- and high-end embedded applications such as telecommunications, traffic systems, and healthcare. This memory offers high performance and low power consumption, even in the most demanding environments.
Working Principle
DRAM works by storing data in an array of memory cells. Each memory cell is composed of a transistor and a capacitor, which form a single bit of data. The capacitor stores a charge, so the presence or absence of the charge indicates whether a bit is a 0 or 1. The transistor is used to control the flow of charge to the capacitor. When a bit needs to be written or read, the transistor is used to switch the data between the capacitor and the sense amplifier.
In order to access a particular memory cell, its address is sent to the memory controller, which then selects the row and column of the memory cell. The charge present in the capacitor is then read and transferred to the sense amplifier, which amplifies it and sends it to the output pins. At the same time, data is written by sending a signal to the capacitor, thus changing its charge.
Conclusion
The R1LV1616RBG-5SI#S0 is a high-performance DRAM designed for mission-critical applications. Its low power consumption, even in demanding environments, make it especially useful for industrial and embedded systems. Its working principle is based on the use of transistors and capacitors to store and retrieve data from an array of memory cells.
The specific data is subject to PDF, and the above content is for reference
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