R6004ENDTL Discrete Semiconductor Products

R6004ENDTL Application Field and Working Principle

The R6004ENDTL is an enhancement-mode low-threshold N-channel MOSFET, which is designed for linear and switching applications. It has a maximum gate-source voltage of -12V and a drain current rating of up to -20A. This device offers a wide range of advantages over other devices, such as its high power output, low on-resistance, rugged design and excellent conduction performance. It is commonly used in computer and telecom equipment, power supplies, automotive audio and lighting systems, and power management systems.

Working Principle

The R6004ENDTL is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) concept. This means that when a voltage is applied to the gate terminal, an electric field is created between the gate and source. This electric field modulates the size of a conducting channel between the source and drain of the device, changing the resistance between them and thus controlling the amount of current passing through.

When using this device, the gate voltage must be higher than the source voltage. This results in the creation of an electric field, which will draw electrons from the source to the gate, allowing current to flow freely between the source and drain. If the gate voltage is lowered, the electric field will be reduced, reducing the amount of current passing through.

Applications

The R6004ENDTL MOSFET is commonly used in various power management and switching applications. It is primarily used in DC-DC converters, inverters, battery chargers, and other power conversion circuits. It can also be used in the output stages of switching power supplies and DC motor controllers, as well as in lighting systems, automotive audio and lighting systems, and power supplies.

The device is also well suited for other applications such as high-speed switching, audio amplifiers, and RF amplifiers. The device offers high current capacity, low switching loss, low on-resistance, and low gate charge. This makes it ideal for power management and switching applications.

Conclusion

The R6004ENDTL MOSFET is an enhancement-mode low-threshold N-channel MOSFET that is designed for linear and switching applications. It has a maximum gate-source voltage of -12V and a drain current rating of up to -20A. This device offers a wide range of advantages over other devices, such as its high power output, low on-resistance, rugged design, and excellent conduction performance. It is commonly used in various DC-DC converter, power electronics, automotive audio and lighting systems, as well as power supplies.