R6008FNX

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R6008FNX is a semiconductor device utilized in a variety of fields, making it a necessary component for countless industrial and commercial applications. The device is a part of the R6008 Family of Field Effect Transistor (FET) units, specifically of the n-channel metal oxide semiconductor (MOSFET) type.

The particular FET range consists of multiple configuration options and pinouts, with R6008FNX featuring an 8-pin power semiconductor. The unit has a maximum power dissipation of 1 Watt, with a maximum drain-source voltage of 36V, a drain current of 2A, an on-resistance of 4.3 mOhm, and a gate-source or gate-body charging transistor with a 4.3nC capacitance rating.

R6008FNX Transistors feature a single commutated p-channel MOSFET with a low on-resistance which is ideal for applications that demand both high-efficiency and low power dissipation. With its lead-free, RoHS-compatible design, and an improved switching performance with energy savings part of its key features, the device is perfect for a number of industrial and consumer applications.

Its main applications include use in AC/DC residential dimmers, motor control systems for appliances such as refrigerators, washing machines, and air conditioners, solar inverters, mobile battery chargers and LED lighting systems.

The R6008FNX is a highly versatile FET that operates effectively as a p-channel MOSFET in conjunction with a suitable external DC power supply or controller. Its overall working principle involves the flow of electrons through the gate, which acts as the control element and regulates current flow through the transistor. Signals are sent to the gate, which causes the drain current to change in direct relation to the gate voltage. The gate threshold voltage (V_th) is the point at which the power transistor switches from off to on.

When the voltage at the gate is greater than the V_th voltage, current flows between the drain and the source; this, in turn, drives an external load and allows for an efficient power delivery. On the other hand, when the voltage at the gate is lower than the V_th, the current flow through the transistoris disabled and the transistor switches off. In addition, the p-channel MOSFET can be utilized in the same manner as an n-channel switch by providing a negative gate voltage.

The advanced R6008FNX offers an improved switching performance with vital energy savings when compared to previous generations of FET transistors, while also providing reliable ESD protection.

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