R6008FNJTL Discrete Semiconductor Products |
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Allicdata Part #: | R6008FNJTLTR-ND |
Manufacturer Part#: |
R6008FNJTL |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 8A LPTS |
More Detail: | N-Channel 600V 8A (Tc) 50W (Tc) Surface Mount LPTS |
DataSheet: | R6008FNJTL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.25773 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | LPTS |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 580pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The R6008FNJTL is a single N-channel Junction Field Effect Transistor (JFET) with a TO-252-4 package. This device is designed for low current, low voltage switching applications. It is a low-cost and durable device that can handle up to 20V of continuous operating voltage.
The R6008FNJTL is a junction FET that is composed of N-type materials. It is a simple structure based on a pn-junction between the channel and the source-drain junction. The channels are formed by the combination of N-type material in the channel and P-type material in the source and drain. The PN-junction allows the channel to be created in the silicided epitaxial layer when the applied gate voltage is high enough.
The R6008FNJTL has a low on-resistance and a low threshold voltage. This characteristic makes it ideal for low voltage switching applications, where a low operating voltage is required. Furthermore, the device is able to handle high operating voltages up to 20V with its highly reliable pn-junction structure. Moreover, the device has a low saturation voltage, which makes it suitable for applications where low power consumption is required.
The operating principle of the R6008FNJTL is mainly dependent on the gate voltage. It provides a linear electrical current varying from 0mA to the drain current of the device when the gate voltage varies from 0V to the threshold voltage of the device. The amount of current that can be passed through the device is determined mainly by the gate voltage, and it can easily be adjusted by manipulating the gate voltage.
The R6008FNJTL is mainly used in low voltage switching applications. It can be used to control the switching on and off of loads or circuits operating in a low voltage range. For example, it can be used in low voltage LED lighting applications for switching on and off of LEDs as per the requirements of the user. It can also be used in low voltage motors to control the speed of the motor and other such applications.
In summary, the R6008FNJTL is a single N-channel Junction Field Effect Transistor (JFET) with a TO-252-4 package and is designed for low current, low voltage switching applications. It is a low-cost and durable device with low on-resistance and a low threshold voltage that makes it suitable for low voltage applications. The gate voltage determines the amount of current that can be passed through the device, and it can be used in applications such as LED lighting and low voltage motor control.
The specific data is subject to PDF, and the above content is for reference
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