Allicdata Part #: | R6008ANX-ND |
Manufacturer Part#: |
R6008ANX |
Price: | $ 2.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 8A TO-220FM |
More Detail: | N-Channel 600V 8A (Tc) 50W (Tc) Through Hole TO-22... |
DataSheet: | R6008ANX Datasheet/PDF |
Quantity: | 1234 |
1 +: | $ 2.15460 |
10 +: | $ 1.94355 |
100 +: | $ 1.56164 |
500 +: | $ 1.21463 |
1000 +: | $ 1.00640 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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The R6008ANX is a single-channel, high-voltage, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It is typically used for linear voltage regulation, as a switch in high-frequency circuits and for light load conditions. It is typically used in industrial, telecommunications, and power electronics applications. The technology employed in the R6008ANX helps ensure successful operations in the most demanding environments.
The R6008ANX consists of an insulated-gate field effect transistor (IGFET) with an N-channel. A voltage applied between the drain and the source creates an electric field which attracts electrons from the source to the drain. The electric field allows the electrons to move through the MOSFET, transverse to the plane of the junction. This transverse movement of electrons creates an electric current, or electron conduction, which is referred to as the “on” state.
The R6008ANX has an ultra-low on-state resistance (RDS) to provide high efficiency in switching applications. The voltage across the device is regulated through the gate conductor. By changing the input voltage applied to the gate, the field strength and electric current can be regulated.
The device features an internal current limit that prevents overcurrent conditions. When the maximum current reaches the set limit, a drive signal is sent from the gate to the source to reduce the current. This feature helps to ensure that the device is not overloaded and can operate safely in high-current applications.
In addition, the R6008ANX is thermal and noise immune. Its low junction-to-case thermal resistance allows the device to handle higher switching frequencies with greater accuracy and reliability. Its low dV/dt and di/dt noise immunity helps to reduce the chance of spurious switching in sensitive circuits.
The R6008ANX is ideal for use in high-power switch-mode power supplies, inverters, motor drivers and other applications requiring high efficiency and high reliability. It has a wide operating temperature range of -55 °C to 175 °C, making it suitable for use in extreme environmental conditions. With a maximum drain source voltage of 700 V and a drain current of 8 A, the R6008ANX is an excellent choice for regulating voltages in applications ranging from commercial to military.
The R6008ANX is designed to provide high reliability and robust performance. Its high variability and low noise immunity make it a suitable choice for applications where reliability and performance are essential. Its low heat dissipation makes it an ideal choice for applications that require high efficiency. The R6008ANX is an efficient and reliable solution for applications where high voltage, high current, and reliable performance are essential.
The specific data is subject to PDF, and the above content is for reference
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