RFD12N06RLE Allicdata Electronics
Allicdata Part #:

RFD12N06RLE-ND

Manufacturer Part#:

RFD12N06RLE

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 18A IPAK
More Detail: N-Channel 60V 18A (Tc) 40W (Tc) Through Hole TO-25...
DataSheet: RFD12N06RLE datasheetRFD12N06RLE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: UltraFET™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 63 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V
FET Feature: --
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description

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The RFD12N06RLE is a N-Channel depletion mode MOSFET from Fairchild. It is used in a wide range of applications due to its low gate threshold voltage, high power and current handling capabilities, and its rugged package.

Introduction

The RFD12N06RLE is a N-Channel depletion mode MOSFET manufactured by Fairchild. It has an ultra low gate threshold voltage and is available in TO-263 and D2PAK packages. The RFD12N06RLE is highly reliable due its high power and current handling capabilities and is a common choice in many applications.

Application Fields and Uses

The RFD12N06RLE can be used in a wide range of applications. It is commonly used for switching, motor control and other power related applications that require high power/current handling capabilities. It is also used in power supplies and audio amplifiers. The RFD12N06RLE has a variety of uses due to its rugged package and low on-resistance.

Working Principle

The RFD12N06RLE is an N-Channel depletion mode MOSFET. This means that the current flow is limited by the gate voltage. If the voltage applied to the gate is below the threshold voltage, then no current flows. If the voltage applied to the gate is above the threshold voltage, then current is allowed to flow through the channel, thereby switching on the device. The resistance of the channel can be varied depending on the amount of voltage applied. This type of device allows for efficient switching and control of current flow.

Advantages and Disadvantages

The RFD12N06RLE has a number of advantages over other types of transistors and MOSFETs. These include its low on-resistance, low gate threshold voltage, and high current handling capabilities. The rugged package also makes the device suitable for harsh environments. However, the RFD12N06RLE also has some disadvantages, such as its limited voltage rating and long recovery time.

Conclusion

The RFD12N06RLE is a N-Channel depletion mode MOSFET from Fairchild. It is used in a wide range of applications due to its low gate threshold voltage, high power and current handling capabilities, and its rugged package. It is commonly used for switching, motor control and other power related applications that require high power/current handling capabilities. The RFD12N06RLE has several advantages, such as low on-resistance, low gate threshold voltage, and high current handling capabilities. However, it also has some disadvantages such as its limited voltage rating and long recovery time.

The specific data is subject to PDF, and the above content is for reference

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