Allicdata Part #: | RFD14N05SM-ND |
Manufacturer Part#: |
RFD14N05SM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 14A TO-252AA |
More Detail: | N-Channel 50V 14A (Tc) 48W (Tc) Surface Mount TO-2... |
DataSheet: | RFD14N05SM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 48W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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RF14DN05SM is a single N-channel enhancement-mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The term “MOSFET” stands for an electrical transistor in which wider areas of the channel are controlled by voltage to produce lesser resistance for current transmission.
These single-channel MOSFETs are of Rds(on) low-voltage type that enable high density mounting and monolithic integration with digital logic circuit or other MOS ICs. The gate-charge-free drive enables superior high-speed switching performance. It features a planar construction and advanced vertical structure, as well as a low-on-voltage and low-on-resistance for low power losses and high efficiency. They are available in several packages, such as SOT-23-6, SOT-23-8, SOP-8, and SOT-223.
Working Principle
The MOSFET works on the principle of doping and depletion. A MOSFET device has four main regions: the substrate, gate, drain, and source. The gate (conductive polysilicon) is located between the substrate and drain. When a voltage is applied to the gate, it creates an electric field which modifies the conductivity of the substrate. This change in conductivity alters the nature of the electric current in the substrate, thus controlling the flow of current between the source and drain.
When a voltage is applied to the gate, it creates an electric field which reduces the concentration of doping substances in the substrate. Without those doping substances, the substrate becomes an insulator, and the current does not flow between the source and the drain. On the other hand, when these doping substances are in high concentration, the current flows in the substrate.
Therefore, the voltage applied to the gate determines the flow of current from the source to the drain. This is the basis of the MOSFET operation.
Application Fields
RFD14N05SM can be used in a variety of application fields. The low-on-voltage and low-on-resistance characteristics make them ideal for use in low power applications such as mobile phones, portable electronic devices, embedded system and automotive electronics. They are also suitable for DC-DC converters and synchronous buck converters. Additionally, these transistors are used in various industrial and automotive motor control applications such as H-bridge motor driver, BLDC motor drivers, position and speed control.
MOSFET transistors are also used in high power applications such as solar inverters, portable power tools, switching power supplies, and uninterruptible power supplies. The high-speed switching and low on-resistance make them suitable for these applications.
The specific data is subject to PDF, and the above content is for reference
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