Allicdata Part #: | RFD14N05-ND |
Manufacturer Part#: |
RFD14N05 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 14A I-PAK |
More Detail: | N-Channel 50V 14A (Tc) 48W (Tc) Through Hole TO-25... |
DataSheet: | RFD14N05 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 48W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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RFD14N05 is a type of single metal oxide semiconductor field-effect transistor (MOSFET) that is a high power, high speed device used for switching and amplification purposes. It is a normally-off type device, meaning it remains off until a drain voltage applied to its gate is latched on. It is highly efficient, with a low on-state resistance at the drain (Rds), and minimal charge storage during switching, making it suitable for use in a wide range of applications. This miniature MOSFET is very small in size, making it suitable for use in limited space applications in which a large MOSFET would not fit. By utilizing the transformer-like properties of MOSFETs, the RFD14N05 achieves fairly good noise immunity, allowing it to function properly in industrial and commercial applications. In addition, its high-speed operation makes it very suitable for switching at high-frequencies.
The RFD14N05 has an N-channel construction, meaning the conducting layer between source and drain is composed of negatively-charged free electrons. This creates a conducting path between the two terminals enabling current to flow when a voltage is applied to the gate, which is under depletion-mode operation. This effect turns the MOSFET ‘on’ when drain voltage is latched on. It is switched off when a negative voltage is applied to the gate. It is capable of working on drain voltages up to 600V and gate voltages up to 20V in applications that require high loads.
A variety of applications can benefit from using the RFD14N05. It can be used as a switch in a power supply, where the MOSFET’s high-speed switching can greatly improve efficiency and reduce the total power dissipation of the system. It can also be used in motor control circuits of various types, such as brushless DC motors, to control the speed, torque and direction of the motor. In addition, the RFD14N05 can be used in DC/DC converters, where it provides fast and efficient energy transfer between the two voltage sources.
In conclusion, the RFD14N05 is a high power, high speed single metal oxide semiconductor field-effect transistor that provides efficient switching in a variety of applications, such as motor control circuits, power supplies, and DC/DC converters. Its small size and low on-state resistance make it a suitable choice for many applications in which space is limited and high currents need to be switched. Its high-speed operation also makes it suitable for switching at high-frequencies.
The specific data is subject to PDF, and the above content is for reference
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