RFD14N05LSM Allicdata Electronics
Allicdata Part #:

RFD14N05LSM-ND

Manufacturer Part#:

RFD14N05LSM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 50V 14A TO-252AA
More Detail: N-Channel 50V 14A (Tc) 48W (Tc) Surface Mount TO-2...
DataSheet: RFD14N05LSM datasheetRFD14N05LSM Datasheet/PDF
Quantity: 3282
Stock 3282Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
FET Feature: --
Power Dissipation (Max): 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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RFD14N05LSM is a monolithic type N-channel MOSFET with low on-resistance and ultra low threshold voltage. Its built-in gate-source capacitance and turn-off delay time make it suitable for high speed switching applications, such as high speed switching power supplies, motor control, and automotive subsystems. Furthermore, the N-channel MOSFET has an inherent temperature-dependent behavior, making it an ideal choice for thermal management designs.

Application Field

RFD14N05LSM offers superb thermal performance, low on-resistance, and fast switching features, making it an ideal choice for high-speed power conversion applications, such as voltage regulator modules (VRM), switch-mode power supplies (SMPS), motor control, inverters, and switching power amplifiers. Moreover, it has excellent current handling capabilities, allowing it to be used in wide range of industrial automation applications, including automotive subsystems, robotics and ink jet printer systems.

Working Principle

RFD14N05LSM utilizes an insulated gate field-effect transistor (IGFET), which is also known as a metal–oxide–semiconductor field-effect transistor (MOSFET). It has an insulated gate, which is composed of an oxide layer and a gate voltage applied to it. When the gate voltage is applied, it results in a major reduction of the source-drain resistance. This is common to all MOSFETs, regardless of if it is N-type or P-Type.

In the case of RFD14N05LSM, it is an N-type MOSFET which utilizes an N-type silicon substrate as its semiconductor material. This is why it is sometimes referred to as "NMOS". The N-type material has many electrons, which form the majority charge carriers and have a negative charge. The source and drain are defined by mechanical and optical lithography, and can be located either beneath or between the gate electrodes.

When a negative gate voltage is applied, it results in an accumulation of electrons below the gate. As a result, a large electric field is formed, which repels the electrons away from the channel. This reduces the resistance of the channel and eventually results in a high drain current, thus turning the MOSFET on. If a positive voltage is applied to the gate, it will result in a decrease of the electric field within the channel, resulting in a reduction of the drain current level, turning the MOSFET off.

For the RFD14N05LSM, the drain current is limited by the maximum gate current and the gate-source capacitance. The maximum gate current is limited by the maximum specified load while the maximum gate-source capacitance is limited by the various parasitic capacitances such as gate-source, gate-drain, and drain-source capacitances. These capacitances are dependent on temperature, which makes them important design considerations when using the RFD14N05LSM in temperature sensitive applications.

By utilizing the unique design of the RFD14N05LSM, it is possible to efficiently and reliably switch high voltages and currents. This makes it an ideal choice for a wide variety of high-power switching applications, from motor control to DC-to-DC converters.

The specific data is subject to PDF, and the above content is for reference

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