RFD16N05 Allicdata Electronics
Allicdata Part #:

RFD16N05-ND

Manufacturer Part#:

RFD16N05

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 50V 16A I-PAK
More Detail: N-Channel 50V 16A (Tc) 72W (Tc) Through Hole TO-25...
DataSheet: RFD16N05 datasheetRFD16N05 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 47 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
FET Feature: --
Power Dissipation (Max): 72W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Series: --
Description

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The RFD16N05 is a part of the robust power MOSFET family. As a surface-mounted N-channel MOSFET, this component has been designed with high performance and ease of use in mind. In addition to its low on-resistance and fast switching capabilities, the RFD16N05 also has superior power and thermal performance, making it ideal for a wide range of applications.

The RFD16N05 is the first N-channel MOSFET to feature an integrated body diode, which provides superior reverse protection. Additionally, this device features a wide SOIC-8 body and a low gate threshold voltage of 3.2 V, enabling it to be used in a wide range of circuits. The RFD16N05 is highly reliable and has been designed to withstand up to 110°C junction temperatures for long-term operation.

The RFD16N05 is well-suited for portable devices and consumer electronics, and is ideal for applications where low on-resistance and fast switching are desired. This device can be used in a wide range of applications, including DC/DC converters, power supplies, motor control circuits, and high-voltage switching applications.

The RFD16N05 is an N-channel MOSFET that operates on a single supply. When the gate is forward-biased, the device will turn on and pass current through the channel. When the gate is reverse biased, the device will turn off and not pass current. This type of MOSFET is designed to conduct high currents with low on-resistance, which makes them suitable for high-power applications. In addition, the device has high voltage breakdown ratings, making it suitable for a variety of applications.

In conclusion, the RFD16N05 is a robust N-channel MOSFET that offers superior performance and reliability. With its wide SOIC-8 body, low gate threshold voltage, and integrated body diode, this device is suitable for a variety of DC/DC converter, power supply, motor control, and high-voltage switching applications.

The specific data is subject to PDF, and the above content is for reference

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