RFD16N06LESM9A Discrete Semiconductor Products

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The RFD16N06LESM9A is a part of a family of advanced low-voltage, high-current MOSFETs developed by Fairchild Semiconductor. It is a N-Channel MOSFET with a very low on-resistance of 16mΩ and a drain current of 60A, in a very small and lightweight 5.9mm x 8mm DFN8 package.

The RFD16N06LESM9A is designed to provide high-efficiency operation in a wide range of applications, from low voltage and power applications to high power and high temperature applications. Its small size and low RDS(on) enable it to provide high power density. The optimized body diode and advance lead form improve conduction and switching performance. The Pb-free package includes drain-source short circuit protection, as well as an internal thermal shutdown feature.

Applications for this MOSFET include automotive applications, power supply application, battery charging applications, DC/DC converters, and lighting applications. This MOSFET is rated for working in operating temperature ranges from -55C to +175C. The RFD16N06LESM9A is available in a number of lead-free packages.

The basic principle of operation of the MOSFET is to control the flow of current from source to drain using electrostatic force or voltage. When a voltage is applied to the gate terminal, it modulates a conductive channel between the two terminals, allowing for current to flow from source to drain. This is also known as field effect control.

The MOSFETs are rated for a maximum drain-source voltage of 60V, maximum drain current of 60A, and a maximum on-resistance of 8mΩ. The RFD16N06LESM9A offers low gate charge and low on-resistance, making it ideal for high-speed switching applications. It also provides low gate-source and gate-drain capacitance, improving efficiency. Moreover, it is protected with a drain-source short-circuit protection and internal thermal shutdown.

The RFD16N06LESM9A has low threshold voltage, making it suitable for use in both low voltage and high current applications. It also features a reliable ESD protection, robust PSO rating, and excellent noise immunity. Furthermore, it has very low gate-charge, a small footprint, and fast switching speeds, making it an ideal choice for a wide range of applications.

Overall, the RFD16N06LESM9A is a low on-resistance, high-current MOSFET and is suitable for use in a variety of applications. It provides low gate charge, low threshold voltage, reliable ESD protection, and robust PSO rating. It is available in a number of lead-free packages and is ideal for quickly switching high current loads. Additionally, it has excellent noise immunity, and its small footprint makes it suitable for space-constrained applications.

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