RFD14N05LSM9A Discrete Semiconductor Products

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The RFD14N05LSM9A is a single N-Channel Power Field-Effect Transistor (FET). It has an innovative design that provides high-speed switching performance at very low on-state resistance levels. It is designed to provide superior performance in low-power applications requiring a wide operating temperature range and high reliability.

The RFD14N05LSM9A can be used in a variety of applications, such as power management and AC/DC conversion in automotive, low-power industrial, and medical electronics. This FET is also commonly used in mobile devices, such as tablets and mobile phones, to improve power efficiency and extend battery life. Furthermore, it is also suitable for usage in solar cell invertors, including those with MPPT, where the device can effectively reduce power dissipation.

At the heart of the FET is a Compact MOS (CMOS) process with a thick-doped substrate that reduces on-state resistance and increases power handling capability. The FET operates at a low voltage (<6V) and can carry up to 5A in a low resistance (RDS) state. The enhanced design also ensures high reliability in harsh conditions and a 125°C junction temperature capability.

RFD14N05LSM9A FETs leverage the CMOS process to provide electrically fast, low-resistance, low-noise operation, with fast switching times and low power dissipation. The Figure 1 circuit, for example, shows a basic 2-phase motor driver utilizing the FET. The circuit is capable of control speeds of up to 12 Watts, and provides robust current control.

Figure 1: Basic 2-phase motor driver using RFD14N05LSM9A FET.

The FET operates in the depletion mode, meaning that it can be used with either N-channel (depletion) or P-channel (enhancement) FETs. The device can be activated by either a logic signal (e.g., 0V/5V) or a PWM signal. With the PWM signal, the depletion mode can be used to adjust the FET’s on-resistance and thus its on-time at the same level of drive current.

The FET is also designed to provide reduced switching losses. The device shorts the gate to source capacitance when turning on, minimizing the total gate charge transition at high frequencies and thereby enabling fast switching performance. The FET’s internal body diode helps reduce switching losses by aiding faster turn-off compared to using an external diode.

In summary, the RFD14N05LSM9A FET provides a high level of performance in applications requiring low on-state resistance and high power capability in a wide temperature range. It offers both fast switching times and low power dissipation due to its CMOS process, and its enhanced design ensures high reliability for applications in challenging environments. Additionally, it is simple to control by either logic or PWM signals, making it an ideal choice for energy-saving applications such as mobile device power management and solar inverters.

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