Allicdata Part #: | RFD15P05SM-ND |
Manufacturer Part#: |
RFD15P05SM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 50V 15A TO-252AA |
More Detail: | P-Channel 50V 15A (Tc) 80W (Tc) Surface Mount TO-2... |
DataSheet: | RFD15P05SM Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 80W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The RFD15P05SM is a versatile single-channel N-channel MOSFET (metal oxide semiconductor field effect transistor) designed for use in power management and switching applications. This device features a small physical size, low on-resistance, and low gate-charge that make it well-suited for use in power conversion applications such as DC-DC converters, LED drivers, and motor controllers. In addition, the device has a wide operating temperature range, low threshold voltage, and integrated reverse-blocking diode.
The RFD15P05SM is a power MOSFET that provides excellent power dissipation, low on-state resistance, and efficient gate drive characteristics. The device is also offered in a range of package sizes, making it suitable for a variety of application settings. The device features a low threshold voltage, high current capability, and stable turn-off, which makes it ideal for use in power conversion applications. Additionally, the device has an integrated reverse-blocking diode, which makes it suitable for use in applications with negative voltages.
The RFD15P05SM has a working principle based on metal oxide semiconductor field effect transistor (MOSFET) technology. Its gate is driven by an electric charge, which, when exceeding a certain threshold voltage, allows current flow through the device. This threshold voltage is generated by a metal gate and is marked as VGS (threshold voltage). The drain voltage VDS and the drain current ID are controlled by the gate voltage VGS.
The RFD15P05SM is a rugged and reliable device that is well suited for use in a variety of applications, including mobile phone power management, switched-mode power supplies, motor control circuits, and LED drivers. The device has a wide operating temperature range and a low low-gate threshold voltage, making it an ideal choice for applications requiring a combination of low on-resistance and high power dissipation.
In power conversion applications, the RFD15P05SM’s low on-resistance and integrated reverse-blocking diode enable highly efficient and reliable power conversion. Additionally, the device’s low gate-charge makes it suitable for use in more compact and power-sensitive applications. The device also features a wide operating temperature range, making it suitable for high-temperature applications.
The RFD15P05SM can be used in a variety of motor control applications, such as motor drives, servo motors, and fans. The device’s low on-resistance and low gate-charge allow for a highly efficient and reliable operation. Furthermore, the device’s low threshold voltage and integrated reverse-blocking diode provide increased safety and protection in such applications.
Overall, the RFD15P05SM is a versatile and reliable power MOSFET that is well-suited for use in power conversion, power management, and motor control applications. Its low on-resistance and low gate-charge, combined with an integrated reverse-blocking diode, make it an ideal choice for applications requiring a combination of power dissipation and power conversion efficiency.
The specific data is subject to PDF, and the above content is for reference
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