RFD15P05SM Allicdata Electronics
Allicdata Part #:

RFD15P05SM-ND

Manufacturer Part#:

RFD15P05SM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 50V 15A TO-252AA
More Detail: P-Channel 50V 15A (Tc) 80W (Tc) Surface Mount TO-2...
DataSheet: RFD15P05SM datasheetRFD15P05SM Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
FET Feature: --
Power Dissipation (Max): 80W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The RFD15P05SM is a versatile single-channel N-channel MOSFET (metal oxide semiconductor field effect transistor) designed for use in power management and switching applications. This device features a small physical size, low on-resistance, and low gate-charge that make it well-suited for use in power conversion applications such as DC-DC converters, LED drivers, and motor controllers. In addition, the device has a wide operating temperature range, low threshold voltage, and integrated reverse-blocking diode.

The RFD15P05SM is a power MOSFET that provides excellent power dissipation, low on-state resistance, and efficient gate drive characteristics. The device is also offered in a range of package sizes, making it suitable for a variety of application settings. The device features a low threshold voltage, high current capability, and stable turn-off, which makes it ideal for use in power conversion applications. Additionally, the device has an integrated reverse-blocking diode, which makes it suitable for use in applications with negative voltages.

The RFD15P05SM has a working principle based on metal oxide semiconductor field effect transistor (MOSFET) technology. Its gate is driven by an electric charge, which, when exceeding a certain threshold voltage, allows current flow through the device. This threshold voltage is generated by a metal gate and is marked as VGS (threshold voltage). The drain voltage VDS and the drain current ID are controlled by the gate voltage VGS.

The RFD15P05SM is a rugged and reliable device that is well suited for use in a variety of applications, including mobile phone power management, switched-mode power supplies, motor control circuits, and LED drivers. The device has a wide operating temperature range and a low low-gate threshold voltage, making it an ideal choice for applications requiring a combination of low on-resistance and high power dissipation.

In power conversion applications, the RFD15P05SM’s low on-resistance and integrated reverse-blocking diode enable highly efficient and reliable power conversion. Additionally, the device’s low gate-charge makes it suitable for use in more compact and power-sensitive applications. The device also features a wide operating temperature range, making it suitable for high-temperature applications.

The RFD15P05SM can be used in a variety of motor control applications, such as motor drives, servo motors, and fans. The device’s low on-resistance and low gate-charge allow for a highly efficient and reliable operation. Furthermore, the device’s low threshold voltage and integrated reverse-blocking diode provide increased safety and protection in such applications.

Overall, the RFD15P05SM is a versatile and reliable power MOSFET that is well-suited for use in power conversion, power management, and motor control applications. Its low on-resistance and low gate-charge, combined with an integrated reverse-blocking diode, make it an ideal choice for applications requiring a combination of power dissipation and power conversion efficiency.

The specific data is subject to PDF, and the above content is for reference

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