Allicdata Part #: | RFD16N05SM-ND |
Manufacturer Part#: |
RFD16N05SM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 16A TO-252AA |
More Detail: | N-Channel 50V 16A (Tc) 72W (Tc) Surface Mount TO-2... |
DataSheet: | RFD16N05SM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 47 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 72W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RFD16N05SM is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is commonly found in a wide range of applications. It is a single transistor type, which means that it consists of one integrated circuit, or chip, which is able to control the flow of electrical current through the circuit. This MOSFET was designed for both low voltages and low power applications; the main benefits of this design are the ease of use and smaller package sizes. Additionally, it provides a high level of efficiency and reliability.
The RFD16N05SM can be used for several different applications, including motor control and switching, power supplies, analog and digital circuits, interface and control circuits, audio and visual systems, solid-state lighting, and smart home systems. It is a popular choice for applications that require low voltage, low power, and high efficiency. Furthermore, the RFD16N05SM has the capability of switching high current and the capability of dissipating heat. As such, it can be used in power applications, and is suitable for automotive, industrial, military, medical, and consumer applications.
The working principle of the RFD16N05SM is relatively simple. The device has four terminals; the source, gate, body or substrate, and the drain. The source and the drain form the two contacts between which the current flows, while the gate acts as a control point. The body or substrate is connected to the source terminal, creating an insulated gate while the source is connected to the body. When an external voltage is applied to the gate, then an electric field is created and this field is capable of controlling the conductivity of the current between the source and the drain. The magnitude of the current is determined by the voltage applied to the gate and the ability of the device to control the flow of current can be adjusted with the voltage applied.
The RFD16N05SM has an excellent on/off ratio which is capable of controlling high currents with low leakage current. The device also offers a low input capacitance and low gate resistance, which is beneficial for applications that require a fast switching rate. Additionally, the RFD16N05SM is compatible with various logic devices, such as CMOS and TTL. A notable feature of this device is its low input capacitance, which makes it suitable for high-speed switching applications such as high speed switching USB data and power lines.
Overall, the RFD16N05SM is a highly efficient and reliable MOSFET that is well suited for applications such as motor control, switching, audio and visual systems, power supplies and interface and control circuits. Its ability to control high currents with low leakage current, in addition to its low input capacitance, allows it to be used in a wide variety of applications. The device is made with a highly efficient design and provides great consistency, making it a reliable choice.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RFD12N06RLE | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 18A IPAKN... |
RFD10P03LSM | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 10A TO-25... |
RFD14N05 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 14A I-PAK... |
RFD14N05SM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 14A TO-25... |
RFD15P05 | ON Semicondu... | -- | 1000 | MOSFET P-CH 50V 15A I-PAK... |
RFD15P05SM | ON Semicondu... | -- | 1000 | MOSFET P-CH 50V 15A TO-25... |
RFD16N05 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 16A I-PAK... |
RFD16N05LSM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 16A TO-25... |
RFD16N05SM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 16A TO-25... |
RFD16N05LSM9A | ON Semicondu... | -- | 5000 | MOSFET N-CH 50V 16A TO-25... |
RFD12N06RLESM9A | ON Semicondu... | 0.29 $ | 1217 | MOSFET N-CH 60V 18A DPAKN... |
RFD16N06LESM9A | ON Semicondu... | 0.47 $ | 7500 | MOSFET N-CH 60V 16A DPAKN... |
RFD14N05LSM | ON Semicondu... | -- | 3282 | MOSFET N-CH 50V 14A TO-25... |
RFD14N05L | ON Semicondu... | 0.71 $ | 2969 | MOSFET N-CH 50V 14A I-PAK... |
RFD14N05SM9A | ON Semicondu... | -- | 7500 | MOSFET N-CH 50V 14A DPAKN... |
RFD14N05LSM9A | ON Semicondu... | 0.25 $ | 5000 | MOSFET N-CH 50V 14A TO-25... |
RFD16N05SM9A | ON Semicondu... | -- | 5000 | MOSFET N-CH 50V 16A TO-25... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...