RFD16N05SM Allicdata Electronics
Allicdata Part #:

RFD16N05SM-ND

Manufacturer Part#:

RFD16N05SM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 50V 16A TO-252AA
More Detail: N-Channel 50V 16A (Tc) 72W (Tc) Surface Mount TO-2...
DataSheet: RFD16N05SM datasheetRFD16N05SM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 47 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
FET Feature: --
Power Dissipation (Max): 72W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The RFD16N05SM is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is commonly found in a wide range of applications. It is a single transistor type, which means that it consists of one integrated circuit, or chip, which is able to control the flow of electrical current through the circuit. This MOSFET was designed for both low voltages and low power applications; the main benefits of this design are the ease of use and smaller package sizes. Additionally, it provides a high level of efficiency and reliability.

The RFD16N05SM can be used for several different applications, including motor control and switching, power supplies, analog and digital circuits, interface and control circuits, audio and visual systems, solid-state lighting, and smart home systems. It is a popular choice for applications that require low voltage, low power, and high efficiency. Furthermore, the RFD16N05SM has the capability of switching high current and the capability of dissipating heat. As such, it can be used in power applications, and is suitable for automotive, industrial, military, medical, and consumer applications.

The working principle of the RFD16N05SM is relatively simple. The device has four terminals; the source, gate, body or substrate, and the drain. The source and the drain form the two contacts between which the current flows, while the gate acts as a control point. The body or substrate is connected to the source terminal, creating an insulated gate while the source is connected to the body. When an external voltage is applied to the gate, then an electric field is created and this field is capable of controlling the conductivity of the current between the source and the drain. The magnitude of the current is determined by the voltage applied to the gate and the ability of the device to control the flow of current can be adjusted with the voltage applied.

The RFD16N05SM has an excellent on/off ratio which is capable of controlling high currents with low leakage current. The device also offers a low input capacitance and low gate resistance, which is beneficial for applications that require a fast switching rate. Additionally, the RFD16N05SM is compatible with various logic devices, such as CMOS and TTL. A notable feature of this device is its low input capacitance, which makes it suitable for high-speed switching applications such as high speed switching USB data and power lines.

Overall, the RFD16N05SM is a highly efficient and reliable MOSFET that is well suited for applications such as motor control, switching, audio and visual systems, power supplies and interface and control circuits. Its ability to control high currents with low leakage current, in addition to its low input capacitance, allows it to be used in a wide variety of applications. The device is made with a highly efficient design and provides great consistency, making it a reliable choice.

The specific data is subject to PDF, and the above content is for reference

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