RJH60D2DPE-00#J3 Allicdata Electronics
Allicdata Part #:

RJH60D2DPE-00#J3TR-ND

Manufacturer Part#:

RJH60D2DPE-00#J3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: IGBT 600V 25A 63W LDPAK
More Detail: IGBT Trench 600V 25A 63W Surface Mount 4-LDPAK
DataSheet: RJH60D2DPE-00#J3 datasheetRJH60D2DPE-00#J3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Input Type: Standard
Base Part Number: RJH60D
Supplier Device Package: 4-LDPAK
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Reverse Recovery Time (trr): 100ns
Test Condition: 300V, 12A, 5 Ohm, 15V
Td (on/off) @ 25°C: 32ns/85ns
Gate Charge: 19nC
Series: --
Switching Energy: 100µJ (on), 160µJ (off)
Power - Max: 63W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

The RJH60D2DPE-00#J3 is a high-performance insulated gate bipolar transistor (IGBT). This power semiconductor combines the low on-state resistance of a metal-oxide-semiconductor field-effect transistor (MOSFET) with the bipolar current gain of a bipolar junction transistor (BJT). The result is superior switching performance, making the IGBT very useful for power applications. This article will discuss the various applications of the RJH60D2DPE-00#J3, its working principle and the advantages of using it over traditional MOSFET and BJT transistors.

Applications of the RJH60D2DPE-00#J3

The RJH60D2DPE-00#J3 is primarily used in applications that require a high-current switch that can be switched on or off electronically. It is ideal for switching applications in welding, induction heating, motor control, inverters, UPS and DC-DC converters. The IGBT also finds uses in lighting, audio equipment and photocopiers. In automotive industry, RJH60D2DPE-00#J3 IGBTs are commonly used in engine control systems, such as for spark plugs, fuel pumps, fuel injectors and electronic throttles. They are also used in power steering systems, air conditioning systems and power windows. IGBTs are also used in hybrid vehicles, too, where the power electronics are increasingly required to operate in higher efficiency and quieter mode.

Working Principle

The working principle of an IGBT is based on the use of a MOSFET, which is a voltage-controlled device that can be used to turn a current on and off. The MOSFET is an insulated-gate type, meaning that the amount of current flowing through it is controlled by an electric gate. When the gate is exposed to a voltage, an electric field is created, which depletes a layer of charge carriers that lies beneath the gate. This has the effect of reducing the current flow through the MOSFET, thus allowing it to be used to switch a current on and off. The IGBT, on the other hand, is a form of bipolar junction transistor (BJT), which is current-controlled rather than voltage-controlled. This means that current, rather than voltage, is needed to turn a BJT on or off. IGBTs are capable of amplifying current, enabling it to turn on or off with a relatively small amount of current. This makes them more efficient than MOSFETs for switching applications and also allows for higher current levels.

Advantages of IGBTs

IGBTs have several advantages over other types of transistors. First, they are more efficient and reliable than MOSFETs and BJTs. This is due to the fact that they can switch quickly and precisely, reducing power loss during switching process. Additionally, their fast switching speeds allow for higher frequency operations, allowing for higher power outputs. IGBTs also have better temperature robustness than MOSFETs, allowing them to operate at higher temperatures.Another advantage of the IGBT is its low on-state resistance, making it an ideal choice for applications that require a low voltage drop. This is especially useful in applications such as power supplies and inverters, where a low voltage drop can reduce power loss and improve efficiency. IGBTs also have low EMI (electro-magnetic interference) and are easier to drive than BJTs, making them a cost-effective choice for many applications.Finally, IGBTs are much easier to integrate into existing designs than MOSFETs or BJTs. This is because IGBTs are available in a variety of packages and pin configurations, making integration simple and cost-effective. This makes them ideal for applications where multiple transistors need to be used in order to achieve a particular goal.

Conclusion

The RJH60D2DPE-00#J3 is a high-performance IGBT that is ideal for applications in which a high-current switch is needed. It is well-suited for welding, induction heating, motor control, inverters, UPS and DC-DC converters. IGBTs have numerous advantages over other types of transistors, such as higher efficiency and reliability, lower on-state resistance, and ease of integration into existing designs. The RJH60D2DPE-00#J3 is perfect for any application where a switching power semiconductor is needed.

The specific data is subject to PDF, and the above content is for reference

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