RJH65T46DPQ-A0#T0

Input Type:	Standard
Supplier Device Package:	TO-247A
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	175°C (TJ)
Reverse Recovery Time (trr):	100ns
Test Condition:	400V, 40A, 10 Ohm, 15V
Td (on/off) @ 25°C:	45ns/170ns
Gate Charge:	138nC
Series:	--
Switching Energy:	450µJ (on), 550µJ (off)
Power - Max:	340.9W
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 40A
Current - Collector (Ic) (Max):	80A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Trench
Part Status:	Active
Packaging:	Tube

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Introduction

RJH65T46DPQ-A0#T0 is a type of transistor based on Insulated-Gate Bipolar Transistors (IGBTs). It is part of the single device family and can be used across a range of electrical applications. IGBTs are popular as they are high current and have low switching losses, often being used to control large power. The RJH65T46DPQ-A0#T0 is a type of low voltage IGBT in a cost-effective package and comes with a very low VCE on specific conditions.

Functional Description

The RJH65T46DPQ-A0#T0, despite being part of the single device family, has several locks for control. It is built with a control gate, which when turned on, allows a current to flow from the collector to the emitter. In addition, it has the capacity to be driven by three other switches, which gives it the advantage of being able to be turned on or off remotely or at different times, allowing for greater current control. The RJH65T46DPQ-A0#T0 also features an optional low VCE(sat) during the off state.

Applications

The RJH65T46DPQ-A0#T0 has various applications and is primarily used to control currents in a range of electrical systems. Its low switching losses make it ideal for use in frequency inverters, motor drives, UPS systems, electric welding and other industrial applications. Additionally, due to its relatively low cost and efficient power handling, the RJH65T46DPQ-A0#T0 can also be used for consumer applications such as controlling power tools and home air conditioning systems.

Working Principle – Insulated Gate Bipolar Transistor

The RJH65T46DPQ-A0#T0 is an IGBT, a type of bi-directional transistor developed in the 1980s. An IGBT is composed of an insulated gate layers with an embedded MOSFET and an NPN transistor. When a voltage is applied to the gate, the MOSFET lowers the resistivity between the base and collector, allowing a current to flow between them. The NPN transistor is then used to control the current and allows for switching between the gates. Due to its high current and low switching losses, IGBTs have become the preferred choice for controlling large powers in many applications.

Limitations

Due to the cost, size and efficiency of IGBTs, they do come with some limitations. For example, the low switching losses and high current limits the maximum operating voltage of IGBTs to approximately 1.2kV, which is lower than the operating voltage of many other transistors. Additionally, unless designed for specific applications, IGBTs tend to have a lower gain than other transistors, making them less suitable for certain applications.

Conclusion

The RJH65T46DPQ-A0#T0 is a low voltage IGBT with a low VCE on specific conditions. It is commonly used across a range of electrical applications due to its high current and low switching losses, with applications ranging from industrial to domestic settings. Despite these advantages, the RJH65T46DPQ-A0#T0 does have some limitations such as a maximum operating voltage of 1.2kV and a lower gain in comparison to other transistors.

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