RJH60M3DPE-00#J3 Discrete Semiconductor Products

The RJH60M3DPE-00#J3 is a single, insulated gate bipolar transistor (IGBT) with a field effect transistor (FET) like gate input. This type of transistor is designed for high power electronic based applications. It is commonly used in motor drive applications, solenoid and relay control, power converters, power factor correction and lighting control.

The RJH60M3DPE-00#J3 is constructed using devices based on the super-junction technology inherent in some IGBTs. This offers excellent on-state voltage blocking capability and low losses over a wide temperature range. The device has a low on-state voltage drop, low switching losses, low noise operation and an extended lifetime.

The RJH60M3DPE-00#J3 is designed specifically for switching applications, as opposed to linear applications, meaning it is designed to switch from off state to on state in a very short time. Its gate is driven by an insulated gate and the transistor has a low gate charging time. This helps in reducing switching losses.

The operating principle of the RJH60M3DPE-00#J3 is based on a transistor’s gate being either open allowing current to pass through or closed which results in no current flowing. When the gate is driven to the open position then current flows in the device and when the gate is switched to the closed state no current can flow in the device. The gate current is used to control the transistor’s on-resistance and transition time.

When an IGBT is used in a switching application such as motor control, the speed at which it is able to switch depends on the gate charging time. A fast gate charging time helps in reducing switching losses and increasing the efficiency of the system. The overall gate charging time of the RJH60M3DPE-00#J3 is fast compared to other transistors. This is important for applications such as motor drive where fast switching is needed.

The RJH60M3DPE-00#J3 has a high blocking voltage and can switch currents up to 60A continuous and 140A peak. This makes it suitable for high power applications such as motor drives, variable speed drives, electronic ballast, consumer power systems and uninterruptible power supplies.

In summary, the RJH60M3DPE-00#J3 is a single, insulated gate bipolar transistor (IGBT) which is typically used in motor drive applications, power converters, power factor correction and lighting control. It is constructed using devices based on the super-junction technology, has a low on-state voltage drop and a fast gate charging time. It has a high blocking voltage and can switch currents up to 60A continuous and 140A peak.