RJH60D7DPK-00#T0

Switching Energy:	1.1mJ (on), 600µJ (off)
Base Part Number:	RJH60D
Supplier Device Package:	TO-3P
Package / Case:	TO-3P-3, SC-65-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Reverse Recovery Time (trr):	100ns
Test Condition:	300V, 50A, 5 Ohm, 15V
Td (on/off) @ 25°C:	60ns/190ns
Gate Charge:	130nC
Input Type:	Standard
Series:	--
Power - Max:	300W
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 50A
Current - Collector (Ic) (Max):	90A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

The RJH60D7DPK-00#T0 is a high-power, single-channel IGBT module designed for use in high-reliability applications. IGBT is a type of transistor that combines the advantages of both its predecessors, the MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and the Bipolar Junction Transistor (BJT), and is classified as Traget-IGBTs (Insulated Gate Bipolar Transistor).

Application Field

The RJH60D7DPK-00#T0\'s application field spans across a wide range of industries, including automotive, home appliances, manufacturing industry, communication systems, electric power systems, and industrial drive systems. The RJH60D7DPK-00#T0 is nicely suited for applications where high power and high performance are both needed, such as in high-current switching operations, welder control systems and industrial motor controllers.

Working Principle

The RJH60D7DPK-00#T0 works by using the basic principles of IGBTs in order to control a large current. The main components of the IGBT are a pair of transistors, the Low Side Transistor (LST) and the High Side Transistor (HST). The LST is used to control the current flow from the negative side of the circuit (i.e. the power source) to the positive side (i.e. the load). In addition, the control signal is sent to the HST which acts as a switch to either let the current go through or block it. In summary, the IGBT is like two-in-one, using the bipolar transistor with a MOSFET technology and resembles a very large transistor. The IGBT has a very low output capacitance and high-speed switching generation, allowing for more efficient power conversion, increased power density and reduced overall power consumption.

Conclusion

The RJH60D7DPK-00#T0 is a high-performance, high-power single-channel IGBT module, designed for use in a variety of industries where high reliability is needed. The device\'s working principle is based on the IGBT, which is a two-in-one combination of MOSFET and bipolar transistor technology, allowing for more efficient power conversion, increased power density and reduced power consumption.

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