RJK6012DPE-00#J3

Vgs(th) (Max) @ Id:	--
Package / Case:	SC-83
Supplier Device Package:	4-LDPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	920 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RJK6012DPE-00#J3 is an n-channel enhancement mode field effect transistor (FET) with a low on-ifi resistance at 4.5 ohms and a 4.5 Thevenin voltage of 1.9V. It is designed for use in power, audio, RF, and switching applications. This device is packaged in a surface mount SO-8 package, making it suitable for all types of PCB designs.The working principle of the transistor is based on the flow of electrons through a semiconductor material. The current flows in one direction through an n-type semiconductor when a small voltage is applied. This is referred to as the on-state and is the basic working principle of transistors. In a field effect transistor, a voltage is applied to the source terminal and gate terminal, which controls the flow of current across the channel. The current flow can be increased or decreased by changing the voltage applied to the gate and source terminals.RJK6012DPE-00#J3 is designed for use in power, audio, RF, and switching applications. Its 4.5 ohm on-state resistance and 4.5 volt Thevenin voltage make it suitable for driving loads such as relays, solenoids, and motor controls. The device is also well suited for audio applications such as Class D amplifiers and speakers. For RF applications, the device is excellent for use in phase-locked loop and amplifier stages. The device is perfect for use in switching applications such as analog switches and multiplexers, since the on-state resistance is low and the Thevenin voltage is easily controlled.In conclusion, RJK6012DPE-00#J3 is a high-performance n-channel enhancement mode FET with a low on-state resistance and a 4.5 Thevenin voltage. It is suitable for a wide range of applications, such as power, audio, RF, and switching. It is packaged in a surface mount SO-8 package, which makes it suitable for use in all types of PCB designs.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description